Dynamics of monolithic passively mode-locked semiconductor lasers

Modelling chirp as a function of reflectivity in electroabsorption modulated lasers (EML)

“…Equation (1) describes the time dependence of the left and right propagating electric fields 'E -' and 'E + ', with gain or absorption supplied by the polarisations 'P dc-' and 'P dc+ ', like other authors we have used optically induced gratings [6], the difference being that ours is supplied by polarisations 'P ac-' and 'P ac+ ', and DFB gratings supplied by the term 'iκE'.…”

Ultrashort Pulse, Monolithic Modelocked Lasers for WDM Systems

“…Also, at high frequency, the complete recovery of the gain or absorption saturation is not allowed, which means that the carrier density modulation is not as deep as the optical modulation. In this case, a frequency domain simulation using the multiple modes as the basis is more attractive than the time domain simulation that can include the spectral dependencies, at best, by gain-spectrum filtering and the group velocity dispersion [7], [9]. The frequency domain method has been used either for qualitative descriptions [2], [12] or in a semi-quantitative way including only the nearest neighbor mode-coupling [13].…”

On-chip mode-locked laser diode structure using multimode interference reflectors

“…It is worthwhile to highlight that since the reflectors must be located at passive areas, the SA cannot be placed by the mirror. Therefore, colliding mode-locked laser structures can only be realized with this approach [14]. In our designs, we have used two main locations for the SA, as shown in Fig.…”