Dynamics of photoexcited carriers and spins in InAsP ternary alloys

Meeker, Michael A.; Magill, Brenden A.; Merritt, Travis R.; Bhowmick, Mithun; McCutcheon, Kelly; Khodaparast, Giti A.; Tischler, Joseph G.; McGill, S.; Choi, Sungwon; Palmstrøm, C. J.

doi:10.1063/1.4808346

Cited by 10 publications

(5 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Also, by fitting the experimental spectra via three different methods a 'hot' carrier temperature is associated with electrons only; all three methods yield similar 'hot' carrier temperatures. This observation suggest that narrow gap heterostructures [38,39] could be a good candidate for hot carrier absorbers [12,33,40,41].…”

Section: (B)mentioning

confidence: 78%

Valence band states in an InAs/AlAsSb multi-quantum well hot carrier absorber

Whiteside¹,

Magill²,

Lumb³

et al. 2019

Semicond. Sci. Technol.

View full text Add to dashboard Cite

In this study, detailed temperature dependent simulations for absorption and photogenerated recombination of hot electrons are compared with experimental data for an InAs/AlAsSb multi-quantum well. The simulations describe the actual photoluminescence (PL) observations accurately; in particular, the room temperature e1-hh1 simulated transition energy of 805 meV closely matches the 798 meV transition energy of the experimental PL spectra, a difference of only 7 meV. Likewise, the expected energy separations between local maxima (p1-p2) in the simulated/experimental spectra have a difference of just 2 meV: a simulated energy separation of 31 meV compared to the experimental value of 33 meV. Utilizing a non equilibrium generalized Planck relation, a full spectrum fit enables individual carrier temperatures for both holes and electrons. This results in two very different carrier temperatures for holes and electrons: where the hole temperature, T h , is nearly equal to the lattice temperature, T L ; while, the electron temperature, T e , is 'hot' (i.e., T e > T L ). Also, by fitting the experimental spectra via three different methods a 'hot' carrier temperature is associated with electrons only; all three methods yield similar 'hot' carrier temperatures.

show abstract

Section: (B)mentioning

confidence: 78%

Valence band states in an InAs/AlAsSb multi-quantum well hot carrier absorber

Whiteside¹,

Magill²,

Lumb³

et al. 2019

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…Due to the low excitation intensities used, cooling excitons give rise to relatively small changes in the LO phonon occupation number such that hot phonon bottlenecking is unlikely. 10 In addition, this carrier migration between localized states may account for the long rise times in the x ¼ 0.40 TRPL spectra, depicted by the initial divergence from the fitted behavior. 36,37 Furthermore, the relaxation of cool excitons may also have to contend with localized states brought about by compositional disorder, which can conceivably account for the two-fold increase in s 2 for x ¼ 0.40 with respect to that for x ¼ 0.13.…”

Section: Resultsmentioning

confidence: 99%

“…6 Investigating the dynamics of carriers involved in radiative transitions in these alloys not only provides a means to assess and improve sample quality but also aids in the design and optimization of device structures. However, while the morphology and the electronic properties of InAsP have been extensively explored, [7][8][9][10][11][14][15][16][17]31 studies concerning optical characterization are limited. [14][15][16][17] Although there are a large number of optical studies involving quantum structures, 2,[18][19][20] alloy epilayers are more appropriate when considering fundamental optical transitions since confounding effects, such as quantum confinement and interface-related defects, are avoided.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence lineshape and dynamics of localized excitonic transitions in InAsP epitaxial layers

Merritt

Meeker

Magill

et al. 2014

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

The excitonic radiative transitions of InAsxP1−x (x = 0.13 and x = 0.40) alloy epitaxial layers were studied through magnetic field and temperature dependent photoluminescence and time-resolved photoluminescence spectroscopy. While the linewidth and lineshape of the exciton transition for x = 0.40 indicate the presence of alloy broadening due to random anion distribution and the existence of localized exciton states, those of x = 0.13 suggest that this type of compositional disorder is absent in x = 0.13. This localization is further supported by the behavior of the exciton transitions at low temperature and high magnetic fields. InAs0.4P0.6 exhibits anomalous “S-shaped” temperature dependence of the excition emission peak below 100 K as well as linewidth broadening at high magnetic fields due to the compression of the excitonic volume amid compositional fluctuations. Finally, photoluminescence decay patterns suggest that the excitons radiatively relax through two channels, a fast and a slow decay. While the lifetime of the fast decay is comparable for both compositions (∼30 ps), that of the slow decay increases from 206 ps to 427 ps as x increases from 0.13 to 0.40, attributable to carrier migration between the localization states of InAs0.4P0.6.

show abstract

“…A recent study concluded that interference effects are crucial in the micro-Raman spectroscopy of graphene and must be included in analysis when extracting various material information from the spectra [31]. As we move into ternary and quaternary alloys and magnetically doped novel materials for ambient operable devices that successfully exploit charge and spin mobility, experimenters have come to avoid any such effects in the measurement scheme [32].…”

Section: Introductionmentioning

confidence: 99%