Dynamics of Rapid Phase Transformations in Amorphous GeTe Induced by Nanosecond Laser Pulses

Nakayoshi, Yoshiaki; Kanemitsu, Yoshihiko; Masumoto, Yasuaki; Maeda, Yoshihito

doi:10.1143/jjap.31.471

Cited by 14 publications

(3 citation statements)

References 15 publications

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“…Although the pseudobinary GeTe-SbTe alloy (and especially the Ge 2 Sb 2 Te 5 composition) is the best known candidate for PCMs, 16 both of its binary constituents, i.e., GeTe and Sb 2 Te 3 , have also demonstrated potential for phase change recording. 17,18 GeTe in particular has received increasing industrial interest as an active material in electrical PCMs, especially in nonvolatile memory devices. 19 Recently, Raoux et al 20 reported an extensive study on crystallization times in GeTe films produced via rf sputtering as a function of alloy composition.…”

Section: Introductionmentioning

confidence: 99%

Dynamics of laser-induced phase switching in GeTe films

Gawełda

Siegel

Afonso

et al. 2011

Journal of Applied Physics

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High Seebeck effects from conducting polymer: Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) based thin-film device with hybrid metal/polymer/metal architecture APL: Org. Electron. Photonics 5, 238 (2012) High Seebeck effects from conducting polymer: Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) based thin-film device with hybrid metal/polymer/metal architecture Appl. Phys. Lett. 101, 173304 (2012) Response to "Comment on 'Silver/silicon dioxide/silver sandwich films in the blue-to-red spectral regime with negative-real refractive index'" [Appl. Phys. Lett. 101, 156101 (2012)] Appl. Phys. Lett. 101, 156102 (2012) On the determination of the glass forming ability of AlxZr1−x alloys using molecular dynamics, Monte Carlo simulations, and classical thermodynamics J. Appl. Phys. 112, 073508 (2012) Enhanced photoanode properties of epitaxial Ti doped α-Fe2O3 (0001) thin films Appl. Phys. Lett. 101, 133908 (2012) Additional information on J. Appl. Phys. Phase switching in GeTe thin films (grown using a modified metal organic chemical vapor deposition system) upon pulsed femtosecond and nanosecond laser irradiation has been studied. Two in situ methods, i.e., optical microscopy and real-time reflectivity measurements, have been used in order to compare the optical response before and after phase change and to follow the phase change dynamics with a time resolution close to 400 ps. The results show that cycling is possible under irradiation with both fs and ns pulses using single pulses for amorphization and multiple pulses for crystallization. The use of ns pulses favors the crystalline-to-amorphous phase transformation, with a characteristic transformation time of $15 ns. The presence of the liquid phase was identified and temporally resolved, featuring a well-defined transient reflectivity state, in between those of the crystalline and amorphous phases. We have also studied the role of material configuration in the phase change dynamics and the mechanisms involved in the re-crystallization process.

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Section: Introductionmentioning

confidence: 99%

Dynamics of laser-induced phase switching in GeTe films

Gawełda

Siegel

Afonso

et al. 2011

Journal of Applied Physics

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“…[7][8][9][10] Computer simulations have also been proposed to calculate the time dependence of the temperature distribution, 11 and to analyze the overwrite process for phase-change media. 12,13 In these simulations, 12,13 however, the nucleation and growth processes were not distinguished and crystallization was characterized by a single timescale.…”

Section: Introductionmentioning

confidence: 99%

Experimental and theoretical investigations of laser-induced crystallization and amorphization in phase-change optical recording media

Peng¹,

Cheng²,

Mansuripur³

1997

Journal of Applied Physics

242

109

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“…To capture the dynamic reflectance of this structure during GST phase transition, we have incorporated standard kinetics theory in our simulation [78][79][80]. The amorphization is accomplished with a very short laser pulse and the modulator is turned OFF as soon as the GST layer melts, because molten GST has same optical properties as a-GST [79,81]. However, crystal formation in amorphous GST during turning the modulator ON is a bit slower process which acts as a speed-limiting factor [82].…”

Section: B Opto-thermal Analysis Of the Modulator: Phase Transition O...mentioning

confidence: 99%

TiN-GST-TiN all-optical reflection modulator for the 2 µm wave band reaching 85% efficiency

Bhuiyan

Mitu²,

Choudhury³

2022

Appl. Opt.

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In this study, we present an all-optical reflection modulator for the 2 µm communication band exploiting a nanogear-array metasurface and phase-change-material G e 2 S b 2 T e 5 (GST). The reflectance of the structure can be manipulated by altering the phase of GST by employing optical stimuli, and this paper provides details on the optical and opto-thermal modeling techniques of GST. A numerical investigation reveals that the metastructure exhibits a conspicuous changeover from ∼ 99 % absorption to very poor interaction with the operating light depending on the switching states of the GST, ending up with 85% modulation depth and only 0.58 dB insertion loss. Due to noticeable differences in optical responses, we can demonstrate a high extinction ratio of 28 dB and a commendable figure of merit of 49, so far the best modulation performance in this wavelength window, to our knowledge. In addition, real-time tracking of reflectance during phase transition manifests high-speed switching expending low energy per cycle, of the order of sub-nJ. Hence, given its overall performance, the device will be a paradigm for optical modulators for upcoming 2 µm communication technology.

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Dynamics of Rapid Phase Transformations in Amorphous GeTe Induced by Nanosecond Laser Pulses

Cited by 14 publications

References 15 publications

Dynamics of laser-induced phase switching in GeTe films

Dynamics of laser-induced phase switching in GeTe films

Experimental and theoretical investigations of laser-induced crystallization and amorphization in phase-change optical recording media

TiN-GST-TiN all-optical reflection modulator for the 2 µm wave band reaching 85% efficiency

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