Dynamics of spin interactions in Mn2+ doped CdMnTe semiconductors studied with optically detected magnetic resonance

Godlewski, M.; Ivanov, V. Yu.; Yatsunenko, S.

doi:10.1016/j.optmat.2007.02.005

Cited by 7 publications

(9 citation statements)

References 18 publications

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“…Such lifetime shortening was observed together with an increase in emission efficiency, i.e., the effect could not be related to enhanced rate of a nonradiative decay [14]. Even though the proposed model of quantum confined atom turned out to be wrong, our following works confirmed the appearance of short components of the PL decay in TM/RE doped nanoparticles [5][6][7][8][9][10][11][12][13]. The most important result of these studies was observation of the co-existence of fast and slow components of the PL decay in all the samples studied, with the fast component of the PL decay being very enhanced in nanocrystals.…”

Section: Enhanced Rate Of Radiative Decay Processes In Nanoparticlesmentioning

confidence: 63%

“…For example, the 4 T 1 to 6 A 1 intra-shell transition of Mn 2+ ions is a parity and spin (transition between spin quartet and sextet) forbidden process. Thus, this transition is fairly inefficient in bulk samples, especially in sulfides and selenides [5][6][7][8][9][10][11][12].…”

Section: Enhanced Rate Of Excitation Process In Nanoparticlesmentioning

confidence: 99%

“…We found that the fast PL decay is only seen if free carriers are co-excited. Once free carriers decay, are trapped etc... the mechanism of the 4 T 1 to 6 A 1 PL enhancement is deactivated and the slow PL decay of the Mn 2+ intra-shell PL should be observed [5][6][7][8][9][10][11][12][13]. This however, turned out not to be the case.…”

Section: Enhanced Rate Of Radiative Decay Processes In Nanoparticlesmentioning

confidence: 99%

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Doped nanoparticles for optoelectronics applications

Godlewski

Wolska

Yatsunenko

et al. 2009

Low Temperature Physics

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Nanoparticles of wide band gap materials doped with transition metal ions or rare earth ions are intensively studied for their possible applications in a new generation of light sources for an overhead illumination. In this work we discuss mechanisms of emission enhancement in nanoparticles doped with rare earth or/and transition metal ions. Arguments are presented that phosphors of nanosize may emit light more efficiently and thus be applied in practical optoelectronic devices. PACS

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Section: Enhanced Rate Of Radiative Decay Processes In Nanoparticlesmentioning

confidence: 63%

Section: Enhanced Rate Of Excitation Process In Nanoparticlesmentioning

confidence: 99%

Section: Enhanced Rate Of Radiative Decay Processes In Nanoparticlesmentioning

confidence: 99%

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Doped nanoparticles for optoelectronics applications

Godlewski

Wolska

Yatsunenko

et al. 2009

Low Temperature Physics

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“…The present study is mostly based on the results of photoluminescence (PL), PL excitation (PLE) and PL kinetics investigations of different nanoparticles and quantum structures. Details on sample studied and experimental set up used can be found elsewhere [5][6][7][8][9][10][11][12].…”

Section: Experimental Setupsmentioning

confidence: 99%

Doped Nanoparticles for Optoelectronics Applications

Godlewski

2010

Meet. Abstr.

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“…Mn 2+ doped II-VI semiconductors ZnX (X = S, Se, Te) and CdTe have interesting optical [1,2], luminescence [3,4], laser [5], electronic-energy-level [6][7][8][9][10], and magnetic [11] properties. Usually, these properties may sensitively correlate to the electronic states of the impurity Mn 2+ in the hosts, which can probe the microscopic mechanisms and local behaviours of these systems with the aid of the electron paramagnetic resonance (EPR) technique.…”

Section: Introductionmentioning

confidence: 99%

Investigations of the spin Hamiltonian parameters for the cubic Mn²⁺ centers in ZnX (X = S, Se, Te) and CdTe

Wang

et al. 2010

Can. J. Phys.

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The spin Hamiltonian parameters (g factors and the hyperfine structure constants) for the cubic Mn 2+ centers in ZnX (X = S, Se, Te) and CdTe are investigated theoretically using the perturbation formulas of these parameters for a tetrahedral 3d 5 cluster containing both the crystal-field and charge-transfer contributions. The relevant molecular orbital coefficients are uniformly determined from the cluster approach, and the calculated spin Hamiltonian parameters are in good agreement with the observed values. The g-shifts of the g factors related to the pure spin value gs (& 2.0023) arising from the charge transfer contributions are opposite (positive) in sign and much larger in magnitude than those from the crystal field contributions. On the other hand, the contributions from the charge-transfer mechanism to the hyperfine structure constants are the same in sign and about 20%-30% in magnitude of those from the crystal-field mechanism. The importance of the charge transfer contributions increases significantly with the increase of the covalency and the spin-orbit coupling coefficient of the ligand, i.e., S 2-< Se 2-< Te 2-.Résumé : Nous faisons une étude théorique des paramètres du Hamiltonien de spin (les facteurs g et les constantes de structure hyperfine) pour les centres Mn +2 cubiques dans ZnX (X = S, Se, Te) et CdTe, en utilisant les formules de perturbation de ces paramètres pour un amas (cluster) tétraèdre 3d 5 , contenant les contributions du champ du cristal et de transfert de charge. Les coefficients orbitaux moléculaires pertinents sont déterminés uniformément à partir de l'approche en amas et les paramètres calculés du Hamiltonien de spin sont en bon accord avec les valeurs observées. Les déplacements g des facteurs reliés à la valeur de spin pur g s ( = 2,0023) causés par les contributions de transfert de charge sont de signe opposé (positif) et d'amplitude beaucoup plus grande que ceux causés par les contributions du cristal. D'autre part, les contributions à la structure hyperfine provenant du mécanisme de transfert de charge sont de même signe et d'amplitude correspondant à 20-30 % de celles causées par les mécanismes cristallins. L'importance des contributions dues au transfert de charge croît significativement avec la covalence du coefficient du couplage de spin-orbite du ligand, c.-à-d. S 2 < Se 2

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Dynamics of spin interactions in Mn2+ doped CdMnTe semiconductors studied with optically detected magnetic resonance

Cited by 7 publications

References 18 publications

Doped nanoparticles for optoelectronics applications

Doped nanoparticles for optoelectronics applications

Doped Nanoparticles for Optoelectronics Applications

Investigations of the spin Hamiltonian parameters for the cubic Mn²⁺ centers in ZnX (X = S, Se, Te) and CdTe

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Dynamics of spin interactions in Mn2+ doped CdMnTe semiconductors studied with optically detected magnetic resonance

Cited by 7 publications

References 18 publications

Doped nanoparticles for optoelectronics applications

Doped nanoparticles for optoelectronics applications

Doped Nanoparticles for Optoelectronics Applications

Investigations of the spin Hamiltonian parameters for the cubic Mn2+ centers in ZnX (X = S, Se, Te) and CdTe

Contact Info

Product

Resources

About

Investigations of the spin Hamiltonian parameters for the cubic Mn²⁺ centers in ZnX (X = S, Se, Te) and CdTe