Dynamics of the Charge Centroid in Metal–Oxide–Nitride–Oxide–Silicon Memory Cells during Avalanche Injection and Fowler–Nordheim Injection Based on Incremental-Step-Pulse Programming

Abstract

The lateral distribution function (LDF) of radio emission from an extensive air shower is considered as the basic signature sensitive to the shower longitudinal development and, as a consequence, to the mass of a primary cosmic ray's particle that initiated a given shower. The peculiarities in the LDF's structure as well as their sensitivity to the height of shower maximum are investigated and explained.

Temperature dependent retention characteristics of ion-beam modified SONOS memories

“…Interfacial traps exist also in the reference sample due to nitride stress effect [4]. In the case of such high interface trap density Si ion implantation does not influence the D it and the distributions are actually the same with a peak density of $5 Â 10 12 eV À1 cm À2 at 0.82 eV, an indication of Si dangling bonds.…”

Inert ambient annealing effect on MANOS capacitor memory characteristics

“…For the case of CT structures the ISPC slope is usually lower than 1 indicating that a portion of the injected carriers is not trapped but leaks out to the gate [24]. This is the direct result of the high electric fields developed across the tunnel oxide during the pulse application [29]. Therefore the ISPC slope for either electrons or holes, to a first approximation, can be utilized as a figure of merit for the efficiency of electrons and holes trapping [29].…”

“…This is the direct result of the high electric fields developed across the tunnel oxide during the pulse application [29]. Therefore the ISPC slope for either electrons or holes, to a first approximation, can be utilized as a figure of merit for the efficiency of electrons and holes trapping [29]. Table 3 shows the slope of the ΔV FB /ΔV P graphs of figure 5 within the corresponding pulse amplitude range.…”

HfO2 nanoparticles embedded within a SOG-based oxide matrix as charge trapping layer for SOHOS-type memory applications

“…Because of the higher dielectric constant, the electric field across the tunneling oxide is enhanced thus enabling a greater injection of charge from the silicon into the trapping layer and also, enables the use of thicker oxide tunnel layers so that the levels of leakage current tunneling back to the substrate are decreased as well, the combined effect being that of better charge injection/retention characteristics. Besides the conduction mechanisms used for charge injection, quite important for effective programming of these devices [10], several high-k materials have been explored for SOHOS-type memories, they include Al 2 O 3 [11][12][13][14], HfO 2 [15][16][17], HfAlO [18][19][20] and many other materials that are currently under research and which are important to enhance the performance of memory devices based on charge trapping phenomena.…”