“…6 The sensitivity of QHE in GaAs 2DEG to radiation has been exploited to engineer ultrasensitive, tunable, frequency agile far-IR/THz photodetectors with nanosecond response time. [6][7][8][9] However, the wide use of GaAs QHE photodetectors is limited by the need of cooling detectors down to liquid Helium temperatures, and no "classical" semiconductor-based QHE photodetectors operate above 12 K. 9 Here, we demonstrate the operation of infrared QHE graphene-based detectors at 70 K, a temperature achievable using simple pumped liquid Nitrogen cryostats, in magnetic field of 7.35 T. Due to graphene's unique band structure, the first few Landau levels are well-separated energetically, thus allowing observation and manipulation of QHE at unprecedentedly high temperatures. 10 Our results overcome the obstacle of low operating temperature in traditional semiconductor systems and open the door for wide arrays of applications.…”