2019
DOI: 10.1016/j.radphyschem.2018.08.032
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E.D.R.A., the Argentine facility to simulate radiation damage in space

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Cited by 7 publications
(2 citation statements)
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“…To analyze the effects of the 10 MeV proton irradiation [38] on the electrical properties of the DUT, the IV characteristics were measured for the pristine state and after each proton irradiation interval. The irradiations were performed at room temperature in the heavy-ion tandem accelerator of the Tandar facility [39] at the EDRA irradiation line (Test of Radiation and Environmental Damage) [40]. The DUT was electrically characterized in situ, soldered onto one LabOSat-01 (LS-01) board [41].…”
Section: A Electrical Characterizationsmentioning
confidence: 99%
“…To analyze the effects of the 10 MeV proton irradiation [38] on the electrical properties of the DUT, the IV characteristics were measured for the pristine state and after each proton irradiation interval. The irradiations were performed at room temperature in the heavy-ion tandem accelerator of the Tandar facility [39] at the EDRA irradiation line (Test of Radiation and Environmental Damage) [40]. The DUT was electrically characterized in situ, soldered onto one LabOSat-01 (LS-01) board [41].…”
Section: A Electrical Characterizationsmentioning
confidence: 99%
“…Most semiconductor components have a high probability of radiation damage [21], [22]. Two things must be concerned to face this effect which is related to the reliability and performance of the components.…”
Section: Introductionmentioning
confidence: 99%