E-Synapse Based on Lead-Free Organic Halide Perovskite (CH3NH3)3Sb2Cl9 for Neuromorphic Computing

Ni, Ziquan; Zhu, Yuan; Ju, Songman; Xu, Zhiai; Tian, Fengqing; Hu, Hailong; Guo, Tao; Li, Fushan

doi:10.1109/ted.2021.3095434

Cited by 7 publications

(2 citation statements)

References 39 publications

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“…Ni et al. obtained a uniform and dense MA 3 Sb 2 Cl 9 film by dropwise addition of anti‐solvent toluene when spin coating the precursor solution 53 . The LARP method can effectively control the shape of the material with high repeatability, but ligands and surfactants may often contaminate the surface of 2D HPs.…”

Section: Fundamental Knowledge Of Hpsmentioning

confidence: 99%

“…Ni et al obtained a uniform and dense MA 3 Sb 2 Cl 9 film by dropwise addition of antisolvent toluene when spin coating the precursor solution. 53 The LARP method can effectively control the shape of the material with high repeatability, but ligands and surfactants may often contaminate the surface of 2D HPs. Sun et al reported the synthesis of square and largesized highly crystallized CsPbBr 3 nanosheets with the assistance of oleic acid and octylamine.…”

Section: Preparation Of 3d Hpsmentioning

confidence: 99%

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Principles, fabrication, and applications of halide perovskites‐based memristors

Cheng,

Dou,

Lian

et al. 2024

FlexMat

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In recent decades, the microelectronics industry has developed rapidly based on the von Neumann architecture and under the guidance of Moore's law. However, as the size of electronic devices approaches the limit and power consumption increases, traditional microelectronic materials and devices are facing more and more challenges. As a new type of semiconductor material, halide perovskites (HPs) have excellent photoelectric characteristics, such as high carrier mobility, controllable band structure, etc., which have been widely used in solar cells, light emitting diodes (LEDs), photodetectors, memristors, and in other fields. Among them, the memristor, as a new type of electronic device, is very promising for in‐memory computing with low power consumption by breaking the limit of von Neumann architecture. Especially, HPs‐based memristors show outstanding photoelectric response performance, low power consumption, and flexible wearability, allowing them to hold great application potential in logical operation, polymorphic storage, and neuromorphic computing, etc. In this review, we first briefly introduce the basic characteristics and preparation methods of HPs. Secondly, the development history, device structure, and performance parameters of memristors are depicted in detail. Thirdly, the resistance mechanism and application of HPs‐based memristors are discussed. Finally, the research status and development prospects of HPs‐based memristors are outlined.

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Section: Fundamental Knowledge Of Hpsmentioning

confidence: 99%

Section: Preparation Of 3d Hpsmentioning

confidence: 99%

Principles, fabrication, and applications of halide perovskites‐based memristors

Cheng,

Dou,

Lian

et al. 2024

FlexMat

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Lead‐Free Perovskites and Metal Halides for Resistive Switching Memory and Artificial Synapse

Zhang,

Lin,

Nirantar

et al. 2024

Small Structures

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Memristive devices such as resistive switching memories and artificial synapses have emerged as promising technologies to overcome the technological challenges associated with the von Neumann bottleneck. Recently, lead halide perovskites have drawn substantial research attention as the candidate material for memristors and artificial synapses due to their unique optoelectronic properties, solution processability, and mechanical flexibility. However, the toxicity of lead‐containing species has raised major concerns for health and the environment, which makes it crucial to transition from lead‐based to lead‐free materials for practical applications. Herein, the recent progress of lead‐free metal halides including perovskites and perovskite analogs for resistive memory and artificial synapse is reviewed. Initially, the fundamentals of lead‐free materials and switching mechanisms are introduced. Next, the material design, fabrication technique, and device performance are summarized and critically evaluated for each metal halide species. Finally, the challenges of the lead‐free metal halides toward memristors and artificial synapses are outlined and discussed, and some potential research directions for future study are proposed.

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Recent advances in halide perovskite memristors: From materials to applications

Liu,

Zeng,

Chen

et al. 2023

Front. Phys.

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E-Synapse Based on Lead-Free Organic Halide Perovskite (CH₃NH₃)₃Sb₂Cl₉ for Neuromorphic Computing

Cited by 7 publications

References 39 publications

Principles, fabrication, and applications of halide perovskites‐based memristors

Principles, fabrication, and applications of halide perovskites‐based memristors

Lead‐Free Perovskites and Metal Halides for Resistive Switching Memory and Artificial Synapse

Recent advances in halide perovskite memristors: From materials to applications

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