Early oxidation stages of germanium substrate in the graphene/Ge(001) system

Dąbrowski, P.; Rogala, Maciej; Pasternak, Iwona; Krukowski, Pawel; Baranowski, J. M.; Strupiński, Włodek; Lutsyk, Iaroslav; Kowalczyk, Dorota A.; Pawłowski, Sławomir; Klusek, Z.

doi:10.1016/j.carbon.2019.04.036

Cited by 10 publications

(12 citation statements)

References 37 publications

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“…1 b) as multilayer islands on a fully closed monolayer film. Similar to literature 42 , 43 some white dots are present in the SEM image, which are most likely related to an oxidation process of Ge as described in a recent study 17 . Obviously, the graphene film is defective with an I D / I G ratio of 0.7.…”

Section: Resultssupporting

confidence: 85%

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Direct growth of graphene on Ge(100) and Ge(110) via thermal and plasma enhanced CVD

Bekdüz

Kaya

Langer

et al. 2020

Sci Rep

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The integration of graphene into CMOS compatible Ge technology is in particular attractive for optoelectronic devices in the infrared spectral range. Since graphene transfer from metal substrates has detrimental effects on the electrical properties of the graphene film and moreover, leads to severe contamination issues, direct growth of graphene on Ge is highly desirable. In this work, we present recipes for a direct growth of graphene on Ge via thermal chemical vapor deposition (TCVD) and plasma-enhanced chemical vapor deposition (PECVD). We demonstrate that the growth temperature can be reduced by about 200 °C in PECVD with respect to TCVD, where usually growth occurs close to the melting point of Ge. For both, TCVD and PECVD, hexagonal and elongated morphology is observed on Ge(100) and Ge(110), respectively, indicating the dominant role of substrate orientation on the shape of graphene grains. Interestingly, Raman data indicate a compressive strain of ca. − 0.4% of the graphene film fabricated by TCVD, whereas a tensile strain of up to + 1.2% is determined for graphene synthesized via PECVD, regardless the substrate orientation. Supported by Kelvin probe force measurements, we suggest a mechanism that is responsible for graphene formation on Ge and the resulting strain in TCVD and PECVD.

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Section: Resultssupporting

confidence: 85%

“…The attractiveness of graphene integration into CMOS technology arises from a wide variety of potential applications, including photodetectors and modulators for the NIR regime 27 − 29 or passivation layers 17 , 30 . Hereby, different Ge platforms, like Ge on Si 31 , 32 or Ge on insulator 33 , 34 are used.…”

mentioning

confidence: 99%

Direct growth of graphene on Ge(100) and Ge(110) via thermal and plasma enhanced CVD

Bekdüz

Kaya

Langer

et al. 2020

Sci Rep

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“…This approach might open some perspectives on the graphene stabilisation and use of thin GeO 2 oxides in future applications. The similar results, but for gr/Ge(001), were obtained on the studies of the oxidation and ageing effects of this interface 93,94 .…”

Section: Graphene Hetero-and Nano-structures On Ge Surfacessupporting

confidence: 81%

Epitaxial graphene/Ge interfaces: a minireview

Dedkov

Voloshina

2020

Nanoscale

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“…This was con rmed by LEED measurements, which indicate that two orientations within the graphene layer are preferable [8]. These discontinuities are origin of unintentional oxidation as it was disclosed by Kelvin Probe Force Microscopy (KPFM) and Scanning Tunneling Microscopy/Spectroscopy (STM/STS) studies [9]. Oxidation process of germanium by penetration of water vapor through graphene grown on Ge(001)/Si(001) substrates has been investigated in this work.…”

Section: Introductionmentioning

confidence: 53%

Formation of GeO 2 under Graphene on Ge(001)/Si(001) Substrates by Water Vapor

Ciepielewski¹,

Caban²,

Dumiszewska³

et al. 2021

Preprint

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Water vapor penetrates through defects in graphene layers grown on Ge(001)/Si(001) substrates and oxidization of germanium forming GeO2 is described. The presence of trigonal GeO2 underneath of graphene has been identified by Raman measurements. It has been found that formation of blisters of GeO2 under graphene leads to dramatic increase of intensity of graphene Raman spectrum. The increase is the most likely due to screening of graphene by GeO2 from nano-faced Ge(001) surface.

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Early oxidation stages of germanium substrate in the graphene/Ge(001) system

Cited by 10 publications

References 37 publications

Direct growth of graphene on Ge(100) and Ge(110) via thermal and plasma enhanced CVD

Direct growth of graphene on Ge(100) and Ge(110) via thermal and plasma enhanced CVD

Epitaxial graphene/Ge interfaces: a minireview

Formation of GeO 2 under Graphene on Ge(001)/Si(001) Substrates by Water Vapor

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