Early stages of InP nanostructure formation on AlInAs

Gocalinska, Agnieszka; Mura, Enrica E.; Manganaro, M.; Juška, Gediminas; Dimastrodonato, V.; Thomas, Kevin; Zangwill, Andrew; Vvedensky, Dimitri D.; Pelucchi, E.

doi:10.1103/physrevb.101.165310

Cited by 4 publications

(3 citation statements)

References 59 publications

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“…InAlAs/InP异质结界面性质一直是长期受到关注且比较复杂的材料生长和器件物理问题 [6] . 例如异质结的外延生长中常常伴随着界面处As/P原子的交换和In, As 原子的自聚团簇效应, 这导致其界面光谱现象具有复杂性而其产生机制也有不同的观点 [7][8][9][10][11][12][13][14][15][16][17] .…”

Section: 引言unclassified

“…和反向界面结构的不同 [8][9][10][11] , 它是由两类界面生长时发生的In-As-P原子的不同扩散机制所导致. 结合现有文献关于InAlAs/InP正向界面和反向界面电子结构的描述 [7][8][9][10][11][12][13][14]16] 过程, 即图3所示的过程③, 类似发光过程在其他半导体异质结如GaN/AlGaN结构的研究中同样存在 [23] .…”

Section: 而这个差异性存在于两样品界面结构的不同迄今关于Inalas/inp异质结认为确实存在着正向界面unclassified

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Different spectral features near the energy bandgaps of normal and inverse heterostructures of In0.52Al0.48As/InP

Wu,

Hu,

Liu

et al. 2024

Acta Phys. Sin.

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The spectroscopy of photoconductivity (PC) and photoluminescence (PL) were used to characterize two heterostructure configurations of InAlAs/InP grown by molecular beam epitaxy (MBE) on the InP (100) substrate. The sample A is the type called normal heterostructure with the In0.52Al0.48As layer grown on InP whereas the sample B is called the inverse type formed by a InP cap layer on the In0.52Al0.48As layer. The front excitation was employed in both PC and PL experiments and the measurements were conducted at 77 K. The PC spectrum of sample A shows an abnormal step-like drop when the photon energy is larger than the energy band gap of In0.52Al0.48As. The phenomenon imply that the conductance of sample is a multilayer effect including the contribution of interfacial two dimensional electron gas (2DEG). Moreover, a conductance peak was observed at 916 nm below the bandgap of InP. Accordingly, an intense luminescent peak at the wavelength manifests in the PL spectrum. The origin of the 916 nm peak is attributed to the recombination of 2DEG electrons with the valence band holes being excited near the interface. However, the spectral feature of the above energy is absent in both PC and PL spectra of sample B. Such a difference may be interpreted with the different interfacial electronic structure of the inverse interface. For the latter case, the band bending effect should be weaker regarding that a graded variation of In-As-P composition is generally associated with an inverse interface of InP/InAlAs. In such a case, the bound energy of 2DEG in the interface potential well rises closer to the conductance band of the bulk. Consequently, the recombination energy of 2DEG at the inverse interface with the holes in the valence band is close to the band-to-band transition of InP bulk and the corresponding luminescence is hard to be distinguished from that of bulk InP. The work also demonstrates that the comparative study with both PC and PL techniques is helpful to provide full insight into the spectral features with the interface electronic property.

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Section: 而这个差异性存在于两样品界面结构的不同迄今关于Inalas/inp异质结认为确实存在着正向界面unclassified

Different spectral features near the energy bandgaps of normal and inverse heterostructures of In0.52Al0.48As/InP

Wu,

Hu,

Liu

et al. 2024

Acta Phys. Sin.

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“…As far as this review is concerned, the Stranski-Krastanov classification is one of particular interest, as today it is, notably, almost only used in relation to quantum dots. Volmer-Weber quantum dots (the mechanism is not conceptually too different from a droplet of liquid aggregating and not wetting a surface), it should be said, are also possible and have been indeed been reported later on 56,57 , but the QD success story is unquestionably linked to SK dots, and deserves a broader discussion.…”

Section: One Finds a (Theoretical) Classification Of Growth Modes Aki...mentioning

confidence: 99%

On the multifaceted journey for the invention of epitaxial quantum dots

Pelucchi

2023

Progress in Crystal Growth and Characterization of Materials

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The interfacial features in photoluminescence of In0.52Al0.48As/InP distinguished with selective excitation

Hu,

Zha,

Zhan

et al. 2024

AIP Advances

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The photoluminescence experiment was performed at 77 K on two types of heterostructures of In0.52Al0.48As/InP grown by molecular beam epitaxy. One type has the so-called direct interface formed with In0.52Al0.48As grown on the InP (100) substrate, and another is a double heterostructure type, i.e., InP/In0.52Al0.48As/InP, including the inverse interface formed with the InP cap. The thickness of both the as-grown InAlAs and InP layers is 2 µm. Under the excitation of 852 nm semiconductor laser, a single peak at 1.198 eV (P0) was observed for the direct interface whereas the inverse interface showed two peaks at 1.240 eV (P1) and 1.117 eV (P2). However, P2 manifests differently from P1 with two interesting features. First, it disappears when the excitation was replaced with the 532 nm laser. Second, when the cap layer of InP/In0.52Al0.48As/InP is thinned to 200 nm, P2 displays a large blueshift effect with the increase in laser intensity, but the extent of blueshift drops when the excitation is increased further into a higher power range. The phenomenon of P2 was attributed to the interface excitation-induced interplay between the luminescence with a carrier localization effect and that caused by the recombination of 2-dimensional electrons with the light-injected holes in the potential well at the interface.

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Early stages of InP nanostructure formation on AlInAs

Cited by 4 publications

References 59 publications

Different spectral features near the energy bandgaps of normal and inverse heterostructures of In<sub>0.52</sub>Al<sub>0.48</sub>As/InP

Different spectral features near the energy bandgaps of normal and inverse heterostructures of In<sub>0.52</sub>Al<sub>0.48</sub>As/InP

On the multifaceted journey for the invention of epitaxial quantum dots

The interfacial features in photoluminescence of In0.52Al0.48As/InP distinguished with selective excitation

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