Keywords: Group-4 transition metals / Zirconium / Hafnium / Pyrazolato ligands / N ligands / Intramolecular hydrogen bond Treatment of tetrakis(dimethylamido)zirconium with four equiv. of 3,5-dimethylpyrazole, 3,5-di-tert-butylpyrazole, or 3,5-diphenylpyrazole in refluxing toluene afforded tetrakis(η 2 -3,5-dimethylpyrazolato)zirconium (86 %), tetrakis(η 2 -3,5-di-tert-butylpyrazolato)zirconium (88 %), and tetrakis(η 2 -3,5-diphenylpyrazolato)zirconium (85 %), respectively, as colorless crystalline solids. The analogous hafnium complexes were prepared through treatment of hafnium tetrachloride with four equiv. of the potassium salts of 3,5-dimethylpyrazolate, 3,5-di-tert-butylpyrazolate, or 3,5-diphenylpyrazolate in tetrahydrofuran to afford tetrakis(η 2 -3,5-dimethylpyrazolato)hafnium (75 %), tetrakis(η 2 -3,5-di-tertbutylpyrazolato)hafnium (58 %), and tetrakis(η 2 -3,5-diphenylpyrazolato)hafnium·toluene (38 %), respectively, as colorless crystalline solids. X-ray crystal structures of representative members of these complexes revealed monomeric species containing four η 2 -pyrazolato ligands and approximate dodecahedral geometry about the metal centers. Treatment of tetrakis(η 2 -3,5-dimethylpyrazolato)hafnium with 3,5-dimethylpyrazole in a 1:1 molar ratio afforded tris(η 2 -3,5-diThin films of binary zirconium and hafnium phases are of significant interest, in view of their useful properties and important applications. Hafnium oxide and hafnium silicate have much higher dielectric constants compared to silicon dioxide, and are among the best candidates to replace silicon dioxide as gate dielectric materials in future microelectronics devices.[1] Analogous zirconium phases are also of interest for similar applications.[1] Zirconium nitride (ZrN, Zr 3 N 4 ) and hafnium nitride (HfN, Hf 3 N 4 ) have potential uses that include hard coatings [2] and barrier layers in mi- [a]