Easily realized inelastic electron tunneling spectrometer

Wang, Y.; Mallik, Robert; Henriksen, P. N.

doi:10.1063/1.1144138

Cited by 16 publications

(6 citation statements)

References 11 publications

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“…Upon completion the tunnel junctions were inserted in a probe for electrical contact and immersed in liquid helium to obtain an IET spectrum. Data were collected over a period of several hours using a spectrometer designed in this laboratory …”

Section: Methodsmentioning

confidence: 99%

“…Data were collected over a period of several hours using a spectrometer designed in this laboratory. 10 Acrylic acid obtained from Aldrich Chemicals was used without further purification. A dilute solution in ethanol was prepared with a concentration of 2.0 × 10 -3 (volume/volume) that produced tunnel junctions with resistances of the order 100 Ω. Spectra collected under these conditions are known to represent the tunneling spectrum of no more than a monolayer of adsorbate.…”

Section: Methodsmentioning

confidence: 99%

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Vibrational Spectroscopic Observation of Acrylic Acid Coadsorbed in Dissociated and Molecular Forms on Oxidized Aluminum

et al. 1996

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Vibrational spectra from monolayer films of acrylic acid (CH 2 CHCOOH) on oxidized aluminum are obtained by inelastic electron tunneling spectroscopy and multiple reflection-absorption infrared spectroscopy. Analysis of these spectra shows that acrylic acid does not adsorb exclusively by a dissociative mechanism as do most carboxylic acids. Instead, at least two coadsorbed forms are observed: physisorbed molecular acid and chemisorbed acrylate ion. Rinsing the dosed surface with ethanol removes the physisorbed form while leaving undisturbed the chemisorbed form.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Vibrational Spectroscopic Observation of Acrylic Acid Coadsorbed in Dissociated and Molecular Forms on Oxidized Aluminum

et al. 1996

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“…The proposed mechanism for vibrational olfaction is inelastic electron tunneling (Walmsley, 1980; Jaklevic and Lambe, 1966; Adkins and Phillips, 1985; Wang et al, 1993; Turin, 1996). Inelastic electron tunneling spectroscopy (IETS) selection rules govern the intensity with which a given vibration is detected, and are more complex than those of the related Raman and infrared (IR) spectroscopy.…”

Section: Introductionmentioning

confidence: 99%

Vibrational Detection of Odorant Functional Groups byDrosophila melanogaster

Maniati

Haralambous

Turin

et al. 2017

eNeuro

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A remarkable feature of olfaction, and perhaps the hardest one to explain by shape-based molecular recognition, is the ability to detect the presence of functional groups in odorants, irrespective of molecular context. We previously showed that Drosophila trained to avoid deuterated odorants could respond to a molecule bearing a nitrile group, which shares the vibrational stretch frequency with the CD bond. Here, we reproduce and extend this finding by showing analogous olfactory responses of Drosophila to the chemically vastly different functional groups, thiols and boranes, that nevertheless possess a common vibration at 2600 cm−1. Furthermore, we show that Drosophila do not respond to a cyanohydrin structure that renders nitrile groups invisible to IR spectroscopy. We argue that the response of Drosophila to these odorants which parallels their perception in humans, supports the hypothesis that odor character is encoded in odorant molecular vibrations, not in the specific shape-based activation pattern of receptors.

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“…3, the barrier height of Ta-Pt electrode extracted by the Fowler-Nordheim tunneling plot increases from 3.18 to 3.65 eV as the annealing temperature increases from 500 to 800°C. 12,17,18 The peaks of Si-O and Hf-O-Si vibration modes of the 500°C annealed sample were weaker than those of the 800°C annealed sample, and those of the negative-gate-bias IETS spectra were stronger than those of the positive ones. 7 It is believed that the Fermi-level pinning ͑work function offset͒ originates from the chemical reaction between metal gate and SiO 2 gate dielectric.…”

mentioning

confidence: 99%

“…2͒. 11,12 Both the 500 and 800°C samples revealed Ta-O bond and the higher and sharper peaks of the 800°C annealed sample indicated the growth of tantalum oxide. 15,16 The observation proved the reaction between Ta of Ta-Pt alloy and SiO 2 .…”

mentioning

confidence: 99%

Study on the interface thermal stability of metal-oxide-semiconductor structures by inelastic electron tunneling spectroscopy

Huang

Tsui

Tzeng

et al. 2006

Applied Physics Letters

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Published by the AIP PublishingArticles you may be interested in Aluminum, oxide, and silicon phonons by inelastic electron tunneling spectroscopy on metal-oxide-semiconductor tunnel junctions: Accurate determination and effect of electrical stress Microcrystalline oxide-incorporated new diffusion barrier for dynamic random access memory and ferroelectric random access memory capacitor electrodeThe bias polarity-dependent inelastic electron tunneling spectroscopy is employed to detect the thermal stability of the Ta-Pt/ SiO 2 / Si and Ta-Pt/ HfO 2 / Si structures. This work provides a direct evidence that the Fermi-level pinning of metal gates is counted for the generation of extrinsic states due to interface interaction. A Ta 2 O 5 layer forms at the Ta-Pt/ SiO 2 interface during thermal annealing whereas only an intermittent Ta-O bond is observed at the Ta-Pt/ HfO 2 interface. Although the heat of formation of HfO 2 is lower than that of SiO 2 , Si presumably diffuses into HfO 2 layer and replaces Hf atoms during the high-temperature annealing.

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Easily realized inelastic electron tunneling spectrometer

Cited by 16 publications

References 11 publications

Vibrational Spectroscopic Observation of Acrylic Acid Coadsorbed in Dissociated and Molecular Forms on Oxidized Aluminum

Vibrational Spectroscopic Observation of Acrylic Acid Coadsorbed in Dissociated and Molecular Forms on Oxidized Aluminum

Vibrational Detection of Odorant Functional Groups byDrosophila melanogaster

Study on the interface thermal stability of metal-oxide-semiconductor structures by inelastic electron tunneling spectroscopy

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