EBIC studies of grain boundaries

Holt, D. B.; Raza, B.; Wojcik, Adam

doi:10.1016/s0921-5107(96)01678-9

Cited by 28 publications

(31 citation statements)

References 6 publications

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“…This contrast is known as peak and trough ͑PAT͒ and has been observed in REBIC investigations of grain boundaries in semiconductors. 5,6,9 The REBIC contrast across the border has been found to depend on the temperature. Figure 2 shows the induced current image recorded at room temperature with a beam current of 10 Ϫ9 A, and the signal profiles at different temperatures along a line, marked in the image, crossing the border.…”

Section: Study Of Growth Hillocks Inmentioning

confidence: 99%

“…Electron-hole pairs generated by the SEM electron beam produce a current in an external circuit which, after amplification, is used to image the spatial distribution of electrically active regions in the sample. This technique has been applied to the study of electronic recombination and electrical conduction in different materials [5][6][7][8] but its capability to characterize the surface features in GaN films has been to our knowledge not previously reported. In this work, RE-BIC is used to image electrically active regions of growth hillocks in GaN:Si films, whose recombination properties have been previously studied by CL.…”

Section: Study Of Growth Hillocks Inmentioning

confidence: 99%

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Study of growth hillocks in GaN:Si films by electron beam induced current imaging

Herrera

Fernández

Piqueras

2001

Journal of Applied Physics

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Remote electron beam induced current (REBIC) measurements have been carried out to investigate electrically active regions in Si doped GaN films. REBIC bright–dark contrast has been observed in the border of growth, round or pyramidal, hillocks, while pyramidal hillocks also show bright contrast at the center. The results are explained by the inhomogeneous distribution of charged point defects and impurities at the hillocks.

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Section: Study Of Growth Hillocks Inmentioning

confidence: 99%

Section: Study Of Growth Hillocks Inmentioning

confidence: 99%

Study of growth hillocks in GaN:Si films by electron beam induced current imaging

Herrera

Fernández

Piqueras

2001

Journal of Applied Physics

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“…2͑b͒-2͑d͒. This contrast is known as peak and trough ͑PAT͒, [10][11][12] carriers are separated. PAT contrast is due to opposite directions of the electric field on different sides of the defect, and can be modelled as two Schottky barriers back-to-back.…”

mentioning

confidence: 98%

“…9 Electron-hole pairs created by the SEM electron beam are separated by built-in electric fields associated with different charged defects and produce a current in an external circuit which, after amplification, is used to image the spatial distribution of electrically active regions in the sample. REBIC has been used in the study of the mechanisms of electronic recombination and electrical conduction of narrow gap semiconductors and semiinsulating materials 10,11 but its capability to characterize HTSC has been, to our knowledge, not previously investigated. In this work, REBIC is used to study HTSC single crystals in which the presence of regions with enhanced electronic recombination has been observed by CL.…”

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confidence: 99%

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Remote electron beam induced current imaging of electrically active regions in YBa2Cu3O7−x single crystals

Dı́az-Guerra

Piqueras

1997

Applied Physics Letters

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Remote electron beam induced current (REBIC) measurements have been carried out to investigate electrically active regions in YBa2Cu3O7−x single crystals. Enhanced REBIC contrast, found in growth steps and other topographic features of the samples, is discussed in terms of charged oxygen-related defects. The capability of REBIC to image structural inhomogeneities caused by strain or plastic deformation in these crystals is also established. Charge carrier diffusion length has been estimated at different temperatures from REBIC linescan profiles.

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Electron Microscopy on Thin Films for Solar Cells

Abou‐Ras¹,

Nichterwitz²,

Romero³

et al. 2011

Advanced Characterization Techniques for Thin Film Solar Cells

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Electrons used for imaging in a scanning electron microscope are either SEs or BSEs. Both types of electrons are emitted from the specimen upon electron irradiation (Figure 12.2). The emission spectrum also contains contributions from Auger electrons (used for surface analysis of samples, see Chapter 15 and Section 16.3), which are emitted after ionization of an inner-core shell, as alternative to characteristic X-rays (see Section 12.2.3). By convention, SEs exhibit energies between 0 and 50 eV, whereas BSEs cover the energy range between 50 eV and the energy of the primary beam E b .SEs are mostly collected outside of the microscope column by a positively biased collector grid and then accelerated on a scintillator layer in front of a photomultiplier (note that also low-energy BSEs are thus detected). Due to their very small exit depths of few nanometers, and also due to the fact that the SE yield depends on the tilt of a given surface element, SEs are used to image the surface topography.SEs are retarded by a positive bias and repelled by a negative one at the sample surface. Also, these electrons are affected by the electrical field present owing to differently biased regions. Thus, negatively charged regions appear bright and positively charged areas dark. Therefore, it is possible to obtain a voltage contrast and also information on the local doping [3].SEs may also be detected inside the microscope column, by use of annular detectors. As much as the electron beam is focused by the series of electrostatic and magnetic lenses when running from top to bottom, it is spread energetically when emitted from the specimen and traveling up the microscope column. SEs and BSEs exhibit substantially different trajectories, and therefore, two corresponding annular detectors at different vertical positions in the column may be used (Figure 12.2). Images recorded by the in-column SE detector rather contain information from the surface. Figure 12.2 (a) Energy distribution of scattered SEs and BSEs. The spectrum features also peaks related to Auger electrons. (b)The electron trajectories in a typical scanning electron microscope, equipped with SE and BSE detectors as well as with a gas-injection system. Scanning Electron Microscopy j301The in-column BSE detector collects mainly Rutherford-type BSEs, that is, multiple elastically scattered BSEs (by nucleus-electron interaction), emitted into rather small angles with respect to the impinging electron beam, and the energy of these BSEs depends on the atomic number Z. This is why the technique is often referred to as Z contrast imaging, that is, it allows for detecting phases-exhibiting differences in Z. Additional energy filtering of these BSEs may reveal even small variations in compositions [4].Apart from Rutherford-type BSEs, also Mott-type (single elastically scattered) BSEs are emitted, however, at much larger angles (with respect to the impinging beam). The exit volume is therefore also smaller, that is, the BSEs are emitted close to the surface, and in consequence, the ...

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EBIC studies of grain boundaries

Cited by 28 publications

References 6 publications

Study of growth hillocks in GaN:Si films by electron beam induced current imaging

Study of growth hillocks in GaN:Si films by electron beam induced current imaging

Remote electron beam induced current imaging of electrically active regions in YBa2Cu3O7−x single crystals

Electron Microscopy on Thin Films for Solar Cells

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