EBL2 an EUV (Extreme Ultra-Violet) lithography beam line irradiation facility

In modern extreme ultraviolet (EUV) lithography machines, sensitive optical components, such as multilayer mirrors and photomasks, may be affected by plasma interactions. The new 13.5 nm EUV-beam-line 2, designed to provide accelerated tests for next generation lithography, is used to investigate EUV-induced plasma phenomena. First systematic measurements of ion fluxes produced in EUV-induced hydrogen plasma are reported, with operating conditions including 5 and 20 Pa gas pressure, 3 kHz EUV pulse repetition rate, and 4.2 W total EUV beam power produced in a 10–15 ns EUV pulse. Space- and time-resolved distributions of ion fluxes and ion energies were measured using a retarding-field ion energy analyzer mounted next to the EUV beam. Typical ion energies were in the range of 1–8 eV and typical ion fluxes were in the range of 2–8 × 1017 ions m−2 s−1. The obtained ion fluxes are applied in a photomask lifetime test to understand the material effects after an EUV exposure.

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First results of EUV-scanner compatibility tests performed on novel 'high-NA' reticle absorber materials

Stortelder

Ebeling

Rijnsent

et al. 2021

International Conference on Extreme Ultraviolet Lithography 2021

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EBL2 an EUV (Extreme Ultra-Violet) lithography beam line irradiation facility

Cited by 3 publications

References 3 publications

Low-Energy Plasma Source for Clean Vacuum Environments: EUV Lithography and Optical Mirrors Cleaning

Low-Energy Plasma Source for Clean Vacuum Environments: EUV Lithography and Optical Mirrors Cleaning

Measurements of ion fluxes in extreme ultraviolet-induced plasma of new EUV-beam-line 2 nanolithography research machine and their applications for optical component tests

First results of EUV-scanner compatibility tests performed on novel 'high-NA' reticle absorber materials

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