Edge-defined self-alignment of submicrometer overlaid devices

Malhi, S.D.S.; Chatterjee, P.K.; Bonifield, T.; Leiss, J.E.; Carter, D.E.; Pinizzotto, Russell F.; Coleman, D. J.

doi:10.1109/edl.1984.25973

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1985

1996

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Cited by 6 publications

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“…Much work had been devoted to developing and studying VTFT's [ 1]- [3]. The inverted TFT structure is more advantageously used in an integrated circuit for increasing integration density and improving the topography [4].…”

Section: Introductionmentioning

confidence: 99%

A novel vertical bottom-gate polysilicon thin film transistor with self-aligned offset

Lai

Lee

Lei

et al. 1996

IEEE Electron Device Lett.

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A novel device structure for the vertical bottom polysilicon gate thin film transistor (TFT) with a self-align offset drain is proposed and demonstrated. The new VTFT allows a deep-submicron channel length, which is determined by the thickness of the active polysilicon film, not by the lithographic system resolution. The self-alignment offset drain reduces the leakage current, as a result, it exhibits good device performance.

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Section: Introductionmentioning

confidence: 99%