Edge facet dynamics during the growth of heavily doped n-type silicon by the Czochralski-method

Stockmeier, L.; Kranert, C.; Raming, G.; Miller, Alfred; Reimann, C.; Rudolph, P.; Friеdrich, J.

doi:10.1016/j.jcrysgro.2018.03.028

Cited by 14 publications

(5 citation statements)

References 46 publications

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“…These instabilities influence the growth kinetics of the growth ridges at the crystal periphery which consist of the so‐called (111) edge facets. As a result of these instabilities dislocations are formed in the vicinity of the border between the non‐facetted and facetted solid–liquid interface . Based on these finding the industrial Cz process for growing heavily n‐doped silicon can be optimized.…”

Section: Development Of Industrial Singe Crystal Melt Growth Technolomentioning

confidence: 99%

Erlangen—An Important Center of Crystal Growth and Epitaxy: Major Scientific Results and Technological Solutions of the Last Four Decades

Friеdrich

Müller

2019

Crystal Research and Technology

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This article describes the historic development of the Erlangen Crystal GrowthLaboratory CGL from its beginnings in 1974 at the chair of Materials of Electrical Engineering (Department of Material Science) of the University of Erlangen-Nuremberg until its current status as a large department "Materials" of the Erlangen Fraunhofer-Institute for Integrated Systems and Device Technology. Essential developments and scientific achievements in the various fields of crystal growth and epitaxy are presented from the early period until today.

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Section: Development Of Industrial Singe Crystal Melt Growth Technolomentioning

confidence: 99%

Erlangen—An Important Center of Crystal Growth and Epitaxy: Major Scientific Results and Technological Solutions of the Last Four Decades

Friеdrich

Müller

2019

Crystal Research and Technology

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“…With boron concentrations exceeding 10 19 atoms cm −3 , the reduction of the etch rate was inversely proportional to the fourth power of the concentration. Stockmeier et al found dislocation formation in heavily-doped silicon etching [22], and defects in bulk silicon resulted in more complicated etching behavior. With the low etch rate of heavily doped silicon, a long-term wet etching procedure is inevitable.…”

Section: Forming Processmentioning

confidence: 99%

Fabrication of silicon electrodes used for micro electrochemical machining

Liu¹,

Yong²,

Tong³

2020

J. Micromech. Microeng.

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In micro electrochemical machining (ECM), stray corrosion always causes undesired material dissolution and deteriorates the machining localization. Adopting sidewall insulating films on the electrode is proven to be an effective approach for reducing stray corrosion. Sidewall films with characteristics of good insulation, thin thickness, and excellent durability are required. In previous work, we proposed a heavily-doped silicon electrode, on which silicon-based films were prepared and acted as the insulating films. To fabricate silicon electrodes, this research investigates wet etching behavior of heavily doped Si (100) and then presents a fabrication process. Firstly, shapes of micro electrodes are designed on photomasks of lithography. Aiming at patterned profiles, effects of etchants on etch rate, dimension accuracy and surface integrity are investigated. Experimental results indicate that tetramethylammonium hydroxide (TMAH) leads to smoother electrode surfaces and fewer defects compared with potassium hydroxide. Then, insulation and durability performances of silicon-based films are investigated. 500 nm SiO2 and 300 nm Si3N4 composite film achieves more durable insulation and excellent compactness. Consequently, silicon electrodes with the dimension of 86 × 54 μm are fabricated on the Si (100) wafer with 25 wt% TMAH etchant, on which SiO2 and Si3N4 film is deposited by low-pressure chemical vapor deposition. In ECM experiments, stray corrosion of the non-machined surface is significantly reduced, and the sidewall taper of the machined structure is reduced to 5.5°. The validity and durability of silicon electrodes for micro ECM processes are verified.

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“…A recent example for striations and back melting was found by the investigation of the growth ridges of Czochralski silicon highly doped with arsenic. [12] The authors report about a concave interface in the cylindrical part of the crystal, and further about morphological instabilities of the interface and about possible constitutional under-cooling in front of the Reproduced with permission. [3] Copyright 2016, Elsevier; photo courtesy by Lothar Ackermann, FEE, Idar-Oberstein.…”

Section: Flaring Growth Initializes Spiral Growth Together With Tempementioning

confidence: 99%

Spiral Crystal Growth in the Czochralski Process—Revisited, with New Interpretations

Schwabe

2019

Crystal Research and Technology

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Herein, the features of some Czochralski crystals with spiral morphology are investigated in detail to develop a model for their spiral growth. The case of a cylindrically growing crystal with a spontaneous transition to spiral growth is considered. At the onset of spiral growth, the development of a "foot" in the meniscus region is identified. It is shown that the growth of a foot takes place under "flaring growth conditions." Insufficient axial heat transport through the crystal leads to a concave interface which is behind the flaring growth. The constraints of automatic weight control force the flaring crystal to grow as a spiral. The selection of a single foot is assisted by temperature fluctuations in the melt. Some symmetry breakings during spiral growth, for example, a meniscus deformation by rotation and the azimuthal growth in the meniscus, have been described already by the author earlier. Only recently spiral growth has been encountered with Czochralski silicon, grown at high pulling speed. These hypotheses on spiral growth hold for high-melting-point oxides as well as for the lower melting silicon.

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Edge facet dynamics during the growth of heavily doped n-type silicon by the Czochralski-method

Cited by 14 publications

References 46 publications

Erlangen—An Important Center of Crystal Growth and Epitaxy: Major Scientific Results and Technological Solutions of the Last Four Decades

Erlangen—An Important Center of Crystal Growth and Epitaxy: Major Scientific Results and Technological Solutions of the Last Four Decades

Fabrication of silicon electrodes used for micro electrochemical machining

Spiral Crystal Growth in the Czochralski Process—Revisited, with New Interpretations

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