Edge isolation of solar cells using laser doping

Abbott, Malcolm; Hallam, Brett; Juhl, Mattias K.; Dong, Lin; Li, Zhongtian; Li, Yang; Rodriguez, John; Wenham, Stuart

doi:10.1016/j.solmat.2014.10.002

Cited by 17 publications

(5 citation statements)

References 18 publications

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“…In [10], the simulated dark JV-curve of a typical n + pp + structure bordering an edge was found an upper limit for J02,edge of ~20 nA/cm. This is broadly consistent with several published values empirically derived from dark-JV measurements of cells with varying edge-to-area ratio, ranging from 5 nA/cm to 20 nA/cm [3,9,[11][12][13][14][15], and in few cases up to 70 nA/cm in [9]. In [16] an improved modeling approach was presented by considering the locality of the edge recombination by solving a quasi-2D distributed circuit model representing the full cell geometry.…”

Section: Introductionsupporting

confidence: 91%

Modeling Edge Recombination in Silicon Solar Cells

Fell

Schön

Müller

et al. 2018

IEEE J. Photovoltaics

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A new approach to model edge recombination in silicon solar cells is presented. The model accounts for recombination both at the edge of the quasi-neutral bulk as well as at an exposed space-charge-region (SCR), the latter via an edgelength specific diode property with an ideality factor of 2: a localized J02,edge. The model is implemented in Quokka3, where the J02,edge is applied locally to the edges of the 3D geometry, imposing less simplifying assumptions compared to the common way of applying it as an external diode. A "worst-case" value for J02,edge, assuming very high surface recombination, is determined by fitting to full detailed device simulations which resolve the SCR recombination. A value of ~19 nA/cm is found, which is shown to be largely independent of device properties. The new approach is applied to model the impact of edge recombination on full-cell performance for a substantial variety of device properties. It is found that recombination at the quasi-neutral bulk edge does not increase the J02 of the dark JV-curve, but still shows a non-ideal impact on the light JV-curve similar to the SCR recombination. This needs to be considered in the experimental evaluation of edge losses, which is commonly performed via fitting J02 to dark-JV curves.

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Section: Introductionsupporting

confidence: 91%

Modeling Edge Recombination in Silicon Solar Cells

Fell

Schön

Müller

et al. 2018

IEEE J. Photovoltaics

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“…It is possible to repassivate the cut edges by adding an additional layer of passivation [14], [15], [16]. Another promising approach is to introduce a specific pattern at the cell edge by using emitter windows or similar [17], [18], [19] or using laser doping [20]. However, according to our knowledge, there are very few studies regarding cut losses of large-area interdigitated back contact (IBC) solar cells.…”

Section: Introductionmentioning

confidence: 99%

Mitigating Cut Losses in Interdigitated Back Contact Solar Cells

Ning

Buchholz

Tune

et al. 2022

IEEE J. Photovoltaics

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“…It is worth mentioning to the readers that all commercially available solar panels available in the market are tested using the standard testing protocol. However, real world testing has revealed that even the solar panels that complete the quality test depict damage owing to hail loading and other environmental conditions [10][11][12][13]. Hence, in-order to bring the presented research work closer to reality the PV modules were tested until cracking point.…”

Section: Methodsmentioning

confidence: 99%

“…Abdelhamid et al [9] summarized various techniques that can be adopted to identify micro-cracks in the solar cells for improving the waste at production stage. Chan et al [10] used laser doping for edge isolation for crack arresting. Gupta et al [11] tested the performance of the solar panels against varying types of hail impacts and found the performance of the modern panels to be satisfactory, however, the researchers reported that the permanent damage caused by the hail loading can lead to reduced performance of the solar panels.…”

Section: Introductionmentioning

confidence: 99%

Fundamental study related to the development of modular solar panel for improved durability and repairability

Majdi

Alqahtani

Almakytah

et al. 2021

IET Renewable Power Gen

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Solar panels around the globe are primarily designed as a plug-and-play solution and the end users are not allowed to repair the panel in case of damage. Natural loadings such wind, snow, sand and hail can lead to irreparable damage to the solar panels and the easiest solution to fix the damaged solar panel is to replace it. This design philosophy leads to a huge quantity of electronic waste as it completely ignores the repairability of the solar panels. In this regard, the presented research work details the development and testing of modular solar panel with performance similar to the traditional design. The modular design was tested for power transfer, re-connection upon impact and the ability to replace the selected parts in case of permanent damage without the need of replacing the entire solar panel. This experimental research work delivers a modular solar panel design that has ease of repairability in case of damage. Furthermore, a detailed economic analysis has been provided for several real-world scenarios that indicate its suitability over existing commercially available solutions. This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

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Edge isolation of solar cells using laser doping

Cited by 17 publications

References 18 publications

Modeling Edge Recombination in Silicon Solar Cells

Modeling Edge Recombination in Silicon Solar Cells

Mitigating Cut Losses in Interdigitated Back Contact Solar Cells

Fundamental study related to the development of modular solar panel for improved durability and repairability

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