Edge Structural Stability and Kinetics of Graphene Chemical Vapor Deposition Growth

Shu, Haibo; Chen, Xiaoshuang; Tao, Xiaoming; Ding, Feng

doi:10.1021/nn300726r

Cited by 190 publications

(228 citation statements)

References 43 publications

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“…The zigzag oriented smooth edges in moderate H 2 plasma can serve as the active sites for the crystal growth of graphene in the CH 4 /H 2 plasma. After growth, the zigzag configurations transform into armchair configurations, which is in agreement with previous theoretical studies,102, 103 as shown in Figure 14c. In order to reveal the critical crystal growth mechanism in atomic scale, scan tunneling microscopy (STM) studies are performed to characterize the edge structures.…”

Section: Mechanism Of Graphene Growth By Pecvdsupporting

confidence: 92%

Controllable Synthesis of Graphene by Plasma‐Enhanced Chemical Vapor Deposition and Its Related Applications

et al. 2016

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Graphene and its derivatives hold a great promise for widespread applications such as field‐effect transistors, photovoltaic devices, supercapacitors, and sensors due to excellent properties as well as its atomically thin, transparent, and flexible structure. In order to realize the practical applications, graphene needs to be synthesized in a low‐cost, scalable, and controllable manner. Plasma‐enhanced chemical vapor deposition (PECVD) is a low‐temperature, controllable, and catalyst‐free synthesis method suitable for graphene growth and has recently received more attentions. This review summarizes recent advances in the PECVD growth of graphene on different substrates, discusses the growth mechanism and its related applications. Furthermore, the challenges and future development in this field are also discussed.

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Section: Mechanism Of Graphene Growth By Pecvdsupporting

confidence: 92%

Controllable Synthesis of Graphene by Plasma‐Enhanced Chemical Vapor Deposition and Its Related Applications

et al. 2016

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“…In a similar attempt to explain observations of the predominantly ZZ edges observed in growing isles, Shu et al [345] carried out a comprehensive DFT study ranging from calculating stabilities of several edge terminations on the Cu(111) surface, their ability to incorporate additional C adatoms and the C 2 cluster, and finally estimating the growth rate of different edges and correspondingly the island shapes and their dominant termination during growth. In their calculations they attached either a ZZ or AC graphene nanoribbon (GNR) to a step on the metal surface, in a similar fashion to the study in [346].…”

Section: Atomistic Attachment Processesmentioning

confidence: 99%

Growth of epitaxial graphene: Theory and experiment

et al. 2014

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A detailed review of the literature for the last 5-10 years on epitaxial growth of graphene is presented. Both experimental and theoretical aspects related to growth on transition metals and on silicon carbide are thoroughly reviewed. Thermodynamic and kinetic aspects of growth on all these materials, where possible, are discussed. To make this text useful for a wider audience, a range of important experimental techniques that have been used over the last decade to grow (e.g. CVD, TPG and segregation) and characterize (STM, LEEM, etc.) graphene are reviewed, and a critical survey of the most important theoretical techniques is given. Finally, we critically discuss various unsolved problems related to growth and its mechanism which we believe require proper attention in future research.

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“…Therefore, the kink sites are the most active for carbon addition or removal onto/from a graphene edge. If the graphene growth is attachment limited and all possibilities for carbon addition/removal onto/from an arbitrary graphene edge with a slanted angle θ are considered, then a simplified formula for the edge orientation-dependent growth/etching rate is (19,21,23,24) RðθÞ ≈ n ZZ ðθÞ p expð−E ZZ =kTÞ + n AC ðθÞexpð−E AC =kTÞ + n K ðθÞ; [2] where n ZZ (θ), n AC (θ), and n K (θ) are the concentrations of the ZZ sites, the AC sites, and the kinks, respectively, along the edge. The calculated formation energies of the ZZ and AC nuclei on a Pt(111) surface are 2.24 eV and 1.60 eV, respectively ( Fig.…”

Section: Significancementioning

confidence: 99%

“…The edge structure of graphene has been shown to significantly influence its various fundamental properties, such as its electronic and magnetic properties, its edge stability, and its chemical reactivity (14)(15)(16)(17)(18). Similarly, the graphene edges, as the sites at which carbon accretion to the twodimensional honeycomb lattice occurs, likely influence the graphene growth (19)(20)(21).…”

mentioning

confidence: 99%

Edge-controlled growth and kinetics of single-crystal graphene domains by chemical vapor deposition

Ren

Zhang

et al. 2013

Proc. Natl. Acad. Sci. U.S.A.

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236

213

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The controlled growth of large-area, high-quality, single-crystal graphene is highly desired for applications in electronics and optoelectronics; however, the production of this material remains challenging because the atomistic mechanism that governs graphene growth is not well understood. The edges of graphene, which are the sites at which carbon accumulates in the twodimensional honeycomb lattice, influence many properties, including the electronic properties and chemical reactivity of graphene, and they are expected to significantly influence its growth. We demonstrate the growth of single-crystal graphene domains with controlled edges that range from zigzag to armchair orientations via growth-etching-regrowth in a chemical vapor deposition process. We have observed that both the growth and the etching rates of a single-crystal graphene domain increase linearly with the slanted angle of its edges from 0°to ∼19°and that the rates for an armchair edge are faster than those for a zigzag edge. Such edge-structure-dependent growth/etching kinetics of graphene can be well explained at the atomic level based on the concentrations of the kinks on various edges and allow the evolution and control of the edge and morphology in single-crystal graphene following the classical kinetic Wulff construction theory. Using these findings, we propose several strategies for the fabrication of wafer-sized, high-quality, single-crystal graphene.two-dimensional materials | crystal growth G raphene, a one-atom-thick, two-dimensional (2D) crystal, has attracted increasing interest because of its interesting properties, which include a large carrier mobility, high transparency, extremely high thermal conductivity, and high tensile strength (1-3). Wafer-sized single-crystal graphene is highly desired and required for numerous applications, especially in electronics and optoelectronics, because grain boundaries between the graphene domains markedly degrade its quality and properties (4-8). Chemical vapor deposition (CVD) has shown great potential for growing large-sized single-crystal graphene domains (8-12); however, the growth rate with CVD is low, typically less than 20 μm/min, which is obviously not conducive to the fabrication of wafer-sized single crystals. In addition, the graphene produced by CVD suffers from poor controllability and low quality. For example, only zigzag (ZZ) or randomly oriented edges have been fabricated via CVD, and the electron mobility in CVD-produced graphene is substantially lower than that in mechanically exfoliated graphene (13). Understanding the atomistic mechanism that governs graphene growth is necessary for the controlled growth of wafer-sized, high-quality, single-crystal graphene. The edge structure of graphene has been shown to significantly influence its various fundamental properties, such as its electronic and magnetic properties, its edge stability, and its chemical reactivity (14)(15)(16)(17)(18). Similarly, the graphene edges, as the sites at which carbon accretion to the twodimensional ho...

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Edge Structural Stability and Kinetics of Graphene Chemical Vapor Deposition Growth

Cited by 190 publications

References 43 publications

Controllable Synthesis of Graphene by Plasma‐Enhanced Chemical Vapor Deposition and Its Related Applications

Controllable Synthesis of Graphene by Plasma‐Enhanced Chemical Vapor Deposition and Its Related Applications

Growth of epitaxial graphene: Theory and experiment

Edge-controlled growth and kinetics of single-crystal graphene domains by chemical vapor deposition

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