2022
DOI: 10.15294/ik.v1i1.66
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EFEK DAYA PLASMA TERHADAP SIFAT FOTOLUMINESEN FILM TIPIS ZnO DOPING Al

Budi Astuti,
Sugianto Sugianto,
Ida Maftuchah
et al.

Abstract: Film tipis ZnO doping Al (ZnO:Al) dideposisi pada substrat corning glass menggunakan metode DC magnetron sputtering. Proses deposisi film tipis ZnO:Al dijaga konstan pada tekanan Argon, suhu deposisi, dan waktu deposisi masing-masing 500 mTorr, 400 ℃, dan 2 jam. Selanjutnya, proses deposisi film tipis ZnO:Al menggunakan variasi daya plasma yaitu 33, 43, dan 50 watt. Karakterisasi sifat optik film tipis ZnO:Al menggunakan Photoluminescence spektroskopi. Daya plasma yang berbeda dapat mempengaruhi energi ion dan… Show more

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“…Theoretically, the addition of Al 3+ can replace the Zn 2+ site in the crystal structure. The ionic radius of Al 3+ is smaller than the ionic radius of Zn 2+ (Al 3+ is 0.053 nm and Zn 2+ is 0.074 nm) hence the crystallite size tends to be reduced [12]. The high-temperature calcination provides the increment of ZnO-Al crystallite size around 40%-50% meanwhile, only less than 3% for TiO2.…”
Section: 𝐷𝐷 =mentioning
confidence: 99%
“…Theoretically, the addition of Al 3+ can replace the Zn 2+ site in the crystal structure. The ionic radius of Al 3+ is smaller than the ionic radius of Zn 2+ (Al 3+ is 0.053 nm and Zn 2+ is 0.074 nm) hence the crystallite size tends to be reduced [12]. The high-temperature calcination provides the increment of ZnO-Al crystallite size around 40%-50% meanwhile, only less than 3% for TiO2.…”
Section: 𝐷𝐷 =mentioning
confidence: 99%