2013
DOI: 10.1007/s11051-013-1467-y
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Effect for hydrogen, nitrogen, phosphorous, and argon ions irradiation on ZnO NWs

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Cited by 10 publications
(1 citation statement)
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“…Pecora et al 20 have shown that Si nanowires under Ge ion irradiation with 45 keV and 70 keV energies experience significant bending at a specific point in which the diameter is equal to or less than the amorphization depth. Ion-irradiated amorphization of nanowires occurs under various ion species as a function of ion fluence, and is also linked to the bending of nanowires such as Ge under 30 keV Ga + beam, reported by Romano et al , 21 Si nanowires under 30 keV Ga + beam, investigated by Jun et al , 22 and ZnO nanowire under 20–100 keV Ar + beam by Borschel et al 17 and Ishaq et al 23 …”
Section: Introductionmentioning
confidence: 93%
“…Pecora et al 20 have shown that Si nanowires under Ge ion irradiation with 45 keV and 70 keV energies experience significant bending at a specific point in which the diameter is equal to or less than the amorphization depth. Ion-irradiated amorphization of nanowires occurs under various ion species as a function of ion fluence, and is also linked to the bending of nanowires such as Ge under 30 keV Ga + beam, reported by Romano et al , 21 Si nanowires under 30 keV Ga + beam, investigated by Jun et al , 22 and ZnO nanowire under 20–100 keV Ar + beam by Borschel et al 17 and Ishaq et al 23 …”
Section: Introductionmentioning
confidence: 93%