“…Pecora et al 20 have shown that Si nanowires under Ge ion irradiation with 45 keV and 70 keV energies experience significant bending at a specific point in which the diameter is equal to or less than the amorphization depth. Ion-irradiated amorphization of nanowires occurs under various ion species as a function of ion fluence, and is also linked to the bending of nanowires such as Ge under 30 keV Ga + beam, reported by Romano et al , 21 Si nanowires under 30 keV Ga + beam, investigated by Jun et al , 22 and ZnO nanowire under 20–100 keV Ar + beam by Borschel et al 17 and Ishaq et al 23 …”
“…Pecora et al 20 have shown that Si nanowires under Ge ion irradiation with 45 keV and 70 keV energies experience significant bending at a specific point in which the diameter is equal to or less than the amorphization depth. Ion-irradiated amorphization of nanowires occurs under various ion species as a function of ion fluence, and is also linked to the bending of nanowires such as Ge under 30 keV Ga + beam, reported by Romano et al , 21 Si nanowires under 30 keV Ga + beam, investigated by Jun et al , 22 and ZnO nanowire under 20–100 keV Ar + beam by Borschel et al 17 and Ishaq et al 23 …”
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