Effect of 100MeV O7+ ion beam irradiation on radio frequency reactive magnetron sputtered ZnO thin films

Growth Evolution of AZO thin Films Deposited by Magnetron Sputtering at Room Temperature

“…Until now, the most used TCO is indium-doped tin oxide (ITO), which presents high transmission in the visible and an electrical resistivity of up to 120 µΩcm 3,4 , but its high cost and toxicity and the scarcity of indium drive the search for alternative materials. Among TCO's, zinc oxide (ZnO) is versatile owing to its properties such as a direct high energy band-gap (~3.3 eV), high exciton binding energy (60 meV) 5 , as well as being a material composed of cheap, abundant, non-toxic elements, and readily deposited by several techniques [6][7][8][9] . ZnO is an intrinsic n-type semiconducting material, and to improve its electrical properties a dopant that provides charge carriers is used.…”

Effect of swift heavy ion (SHI) irradiation on the structural and optical properties of N implanted CVT grown ZnSe single crystals

“…In literature, there are several reports on the influence of SHI or ion implantation on the physical properties of II-VI semiconductors based thin films [9][10][11][12][13] and single crystals [14][15][16]. In the particular case of ZnSe, the optical studies of N implanted ZnSe single crystals [15] and of 120 MeV Au ion irradiated ZnSSe single crystals [16], have been reported.…”