Effect of a Cu–Se secondary phase on the epitaxial growth of CuInSe2 on (100) GaAs

Yoon, Soo Young; Kim, S.; Crăciun, V.; Kim, W.K.; Kaczynski, Ryan; Acher, R.; Anderson, Travis J.; Crisalle, O.D.; Li, S.S.

doi:10.1016/j.jcrysgro.2005.03.043

Cited by 12 publications

(7 citation statements)

References 15 publications

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“…However, our analyses cannot rule out the existence of slightly Cu-poor Mn-substituted CuInSe 2 phases. The possible Cu deficiency and the determined Se deficiency may induce amorphous or secondary Cu−Se phases that aggregate at the grain boundaries as in the CuInSe 2 films . The amount of these secondary phases would be too small to detect by powder diffraction techniques and chemical composition analysis.…”

Section: Discussionmentioning

confidence: 99%

Site Preference of Manganese on the Copper Site in Mn-Substituted CuInSe₂ Chalcopyrites Revealed by a Combined Neutron and X-ray Powder Diffraction Study

et al. 2010

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Ternary chalcopyrite systems are of interest for a number of applications, including host materials for dilute magnetic semiconductors and thin film photovoltaic cells. There are two cation sites, 4a and 4b, in the chalcopyrites, and the location of transition-metal ions in the chalcopyrites plays an important role in determining their magnetic and electrical properties. In this work, neutron and X-ray powder diffraction of the Mn-substituted CuInSe 2 compounds, namely, CuIn 1-x Mn x Se 2 (x = 0.05 and 0.10) and Cu 1-y In 1-y Mn 2y Se 2 (2y = 0.05, 0.15, and 0.20), has been carried out. Rietveld refinements using the neutron and X-ray diffraction data reveal a site preference of manganese ions on the copper site (4a) rather than the indium site (4b), in both series, namely, under In-poor conditions and under Cu-poor and In-poor conditions. The major fraction of Mn ions occupies the copper site, which thus pushes the expelled copper ions to the indium site, resulting in antisite Cu In defects. These results can help to explain why Mn-substituted CuInSe 2 compounds display antiferromagnetic interactions instead of ferromagnetic coupling as predicted by first-principles calculations. High frequency electron paramagnetic resonance measurements suggest that the oxidation state of the manganese ions is divalent.

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Section: Discussionmentioning

confidence: 99%

Site Preference of Manganese on the Copper Site in Mn-Substituted CuInSe₂ Chalcopyrites Revealed by a Combined Neutron and X-ray Powder Diffraction Study

et al. 2010

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“…This indicates the presence of a binary phase of Cu 2-x Se on the surface. A secondary phase of CuSe for Cu-rich copper chalcopyrites is already known [8,[22][23][24][25].…”

Section: Cugase 2 (001)mentioning

confidence: 99%

Epitaxial growth of CuGaSe 2 thin-films by MBE—Influence of the Cu/Ga ratio

Popp

Pettenkofer

2017

Applied Surface Science

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By molecular beam epitaxy (MBE) CuGaSe 2 (CGS) thin-films with varying Cu/Ga ratios were grown epitaxial on GaAs (100) and stepped GaAs (111)A substrates. Cu/Ga ratios from Cu-poor to Cu-rich were obtained. In this work the appearance of Cu crystallites on the surface of epitaxial CGS (001) layers are observed and strategies to avoid these precipitations are presented. High quality thin CGS films of around 100 nm thickness are obtained, enabling a detailed analysis of the electronic and chemical properties as well as of the crystal structure of the CGS surfaces. The electronic structure with respect to the Cu/Ga ratio was characterized in-situ by XPS and UPS. By LEED a (4x1) (Cu-poor and near stoichiometric) and a (4x2) (Cu-rich) reconstruction of a zinc blende structure were obtained. For CuGaSe 2 (112) the LEED pattern showed a (3x1) chalcopyrite reconstruction for Cu/Ga ratios < 1. A (1x1) reconstruction of the chalcopyrite structure was observed for Curich (112) samples. The observed dependence of the surface reconstruction on the stoichiometry for CGS grown on GaAs has not been reported in literature so far. Additionally, for Cu-rich stoichiometries a binary phase of Cu 2-x Se appeared independently of orientation. The film morphology was investigated ex-situ by SEM.

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“…37,38 Additionally, the XRD spectrum indicates the presence of CuSe 2 and CuO 3 Se minority phases. 37,39 Copper selenide is a well-known impurity phase present in CISe and CIGSe thin-film samples grown under nearly stoichiometric and under Cu-rich conditions, [40][41][42] and can be efficiently removed by chemical etching.…”

Section: Polycrystalline Base Layermentioning

confidence: 99%

Synthesis and formation mechanism of CuInSe₂nanowires by one-step self-catalysed evaporation growth

et al. 2016

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High-quality CuInSe 2 (CISe) nanowires have been prepared by a one-step evaporation process. The presented growth process results in a composite material consisting of CISe NWs on top of a polycrystalline CISe base layer. The nanowires were extensively characterized by transmission electron microscopy, confirming their composition and atomic-scale crystal structure with a very low number of structural defects. From these analyses, we infer that the growth axis is along the [111] direction. The polycrystalline base layer has a tetragonal chalcopyrite structure and is optically active as confirmed by X-ray diffraction and photoluminescence (PL) analysis, respectively. Potential applications of this composite CISe NW/base-layer material for photovoltaic energy conversion are supported by the reduced reflectivity of the material and its strong PL intensity. The presented growth method is based on elemental evaporation under vacuum conditions, which makes the process compatible with the fabrication of photovoltaic devices.

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Effect of a Cu–Se secondary phase on the epitaxial growth of CuInSe2 on (100) GaAs

Cited by 12 publications

References 15 publications

Site Preference of Manganese on the Copper Site in Mn-Substituted CuInSe₂ Chalcopyrites Revealed by a Combined Neutron and X-ray Powder Diffraction Study

Site Preference of Manganese on the Copper Site in Mn-Substituted CuInSe₂ Chalcopyrites Revealed by a Combined Neutron and X-ray Powder Diffraction Study

Epitaxial growth of CuGaSe 2 thin-films by MBE—Influence of the Cu/Ga ratio

Synthesis and formation mechanism of CuInSe₂nanowires by one-step self-catalysed evaporation growth

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Effect of a Cu–Se secondary phase on the epitaxial growth of CuInSe2 on (100) GaAs

Cited by 12 publications

References 15 publications

Site Preference of Manganese on the Copper Site in Mn-Substituted CuInSe2 Chalcopyrites Revealed by a Combined Neutron and X-ray Powder Diffraction Study

Site Preference of Manganese on the Copper Site in Mn-Substituted CuInSe2 Chalcopyrites Revealed by a Combined Neutron and X-ray Powder Diffraction Study

Epitaxial growth of CuGaSe 2 thin-films by MBE—Influence of the Cu/Ga ratio

Synthesis and formation mechanism of CuInSe2nanowires by one-step self-catalysed evaporation growth

Contact Info

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Site Preference of Manganese on the Copper Site in Mn-Substituted CuInSe₂ Chalcopyrites Revealed by a Combined Neutron and X-ray Powder Diffraction Study

Site Preference of Manganese on the Copper Site in Mn-Substituted CuInSe₂ Chalcopyrites Revealed by a Combined Neutron and X-ray Powder Diffraction Study

Synthesis and formation mechanism of CuInSe₂nanowires by one-step self-catalysed evaporation growth