Effect of a pulsed magnetic field on the luminescence of silver chloride single crystals

Voloshina, T. V.; Левин, М. Н.; Dronov, M. A.; Kavetskaya, T. V.

doi:10.1134/s1063785006010305

Cited by 8 publications

(6 citation statements)

References 4 publications

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“…When the voltage pulses are negative, an "ion-pho ton" surface image appears [7]. Therefore, a mag netic pulse induced change in the defect system in microcrystals [8] is expected to considerably influence the formation of "positive" gas discharge images.…”

Section: Influence Of a Pulsed Magneticmentioning

confidence: 99%

Influence of a pulsed magnetic field on the silver halide photographic process

Frolov

Boichenko

2012

Tech. Phys.

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Section: Influence Of a Pulsed Magneticmentioning

confidence: 99%

Influence of a pulsed magnetic field on the silver halide photographic process

Frolov

Boichenko

2012

Tech. Phys.

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“…All this indicates that such behavior of the luminophor spectral properties is due to individual features of each of these processes, i.e., optical generation of nonequilibrium charge carriers and their radiative recombination. The number of impurity centers involved in excitation and recombination of carriers probably does not change significantly before and after MPF treatment [1,5,6]. However, their involvment has a dominating influence on the spectral properties of these luminophors.…”

Section: Introductionmentioning

confidence: 96%

“…Research on the influence of MF on the luminescence properties of single crystals of ZnS [5] and AgCl [6] made it possible to evaluate the concentration change of defects in these materials with a change of the absolute intensities of their luminescence bands. The goal of the present work is to explain the influence of a weak magnetic pulsed field (MPF) on the efficiency of transitions corresponding to excitation and recombination of charge carriers and on intracenter luminescence based on the luminescence research methods.…”

Section: Introductionmentioning

confidence: 99%

“…This in turn leads to the appearance of many S vacancies (V S ) that form defect complexes in the crystal. It was assumed during a study of the influence of a MPF on single-crystalline AgCl [6] that the MPF destroys defect complexes and forms mobile vacancies of the volatile component. Migration of S vacancies may be accompanied by occupation of some of them by interstitial atoms, interaction with Zn 2+ vacancies, etc., which decreases the concentrations of V S and V Zn .…”

Section: Introductionmentioning

confidence: 99%

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Effect of magnetic pulsed field on luminescence of zinc sulfide doped with CuCl, In, and MnS

et al. 2007

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The effect of a magnetic pulsed field (MPF) of induction B = 1 T on photoluminescence, electroluminescence, and luminescence excitation spectra of powdered ZnS doped with CuCl, In, and MnS is investigated. It is shown that MPF treatment of these materials changes the photoluminescence spectra only in the case of luminophor ZnS:In whereas only the luminescence excitation spectra change for ZnS:CuCl and ZnS:Mn.Introduction. It is well known that an energetically weak magnetic field (MF) of induction B ≈ 1 T can effectively influence at room temperature physical processes in nonmagnetic materials and cause long-term residual changes in their properties. According to the literature [1,2], this can be explained by the influence of the MF on the kinetics and yield of spin-coupled reactions in the subsystem of paramagnetic structural defects that is manifested in dislocation mobility. The nature of these effects is related to the fact that the MF interferes with the evolution of paramagnetic particles during a short (1-10 ns) intermediate stage during which spin-lattice relaxation cannot occur. The duration of spin conversion is ~10 -10 sec for MF induction of B ≈ 1 T. Therefore, investigations of property changes of actual crystals influenced by external MF can provide information on the occurrence of physical processes in the subsystem of structural defects with nanosecond resolution [1][2][3][4]. Furthermore, the ability to direct the influence on the subsystem of structural defects and other paramagnetic components of the material has important applied signficance. Defects are exceedingly common luminescence quenchers in A II B VI materials used as luminophors. Therefore, any method that allows luminescence centers to be activated in the material by removing quenching centers from the recombination region should be studied in detail.Research on the influence of MF on the luminescence properties of single crystals of ZnS [5] and AgCl [6] made it possible to evaluate the concentration change of defects in these materials with a change of the absolute intensities of their luminescence bands. The goal of the present work is to explain the influence of a weak magnetic pulsed field (MPF) on the efficiency of transitions corresponding to excitation and recombination of charge carriers and on intracenter luminescence based on the luminescence research methods. Powdered luminophors based on ZnS doped with impurities that are the ones most often used as coactivators (Cl,In [7,8]) and activators ) of ZnS luminescence were selected for the research. Moreover, an impurity of Mn in ZnS has another interesting feature. It has intracenter transitions in its unfilled 3d-shell.Experimental. Powdered ZnS (ETO.035.295 TU) was doped with ~15 µm (80% composition) particles by annealing together at 800 o C for 1 h (using an activated carbon gas trap) with one of CuCl, MnS, or In. We investigated pairs of identical samples of doped ZnS, one of which was treated with a MPF; the other, (which was not treated with a MPF) used as a control. Po...

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“…Alternative mechanisms were proposed in different reports [1][2][3][4], which, however, do not explain all experimental results. In particular, this refers to transformation of the low-frequency region in spectral dependences [5]. So, investigations in this direction are required to understand all the processes induced by weak magnetic fields (WMF).…”

Section: Introductionmentioning

confidence: 99%

Influence of pulse magnetic fields treatment on optical properties of GaAs based films

Конакова¹

2014

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. Long-term transformations of the optical reflectance of GaAs epitaxial structure under weak magnetic field treatment (B = 60 mT, f = 10 Hz, τ = 1.2 ms, t = 5 min) have been obtained. Optical measurements were performed within the wavelength range 800…1100 nm at 300 K. Non-monotonous changes of reflectance were observed. Experimental results have been interpreted in terms of diffusion of point defects, resulting from destruction of metastable complexes (probably [V As +impurity]), from the internal boundaries to the surfaces of the investigated structures. The method for detection of non-equilibrium complexes in multilayer objects has been proposed.

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Effect of a pulsed magnetic field on the luminescence of silver chloride single crystals

Cited by 8 publications

References 4 publications

Influence of a pulsed magnetic field on the silver halide photographic process

Influence of a pulsed magnetic field on the silver halide photographic process

Effect of magnetic pulsed field on luminescence of zinc sulfide doped with CuCl, In, and MnS

Influence of pulse magnetic fields treatment on optical properties of GaAs based films

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