Effect of a shaped magnetic field on Czochralski silicon growth

Flow Control by Magnetic Fields during Crystal Growth from Melt

“…The first application of a CMF in a CZ configuration was reported independently by Hirata and Hoshikawa [86] and Series [87]. They showed the potential of the CMF to realize localized control of thermal convection at the melt-crucible interface, independent of that at the free melt surface.…”

“…Because CMF has a minimum influence on the melt convection near the S-L interface, Series [87] demonstrated experimentally that the axial phosphorus and carbon incorporation in the crystals was similar to the nonmagnetic crystals. Because CMF has a minimum influence on the melt convection near the S-L interface, Series [87] demonstrated experimentally that the axial phosphorus and carbon incorporation in the crystals was similar to the nonmagnetic crystals.…”

Travelling magnetic fields applied to bulk crystal growth from the melt: The step from basic research to industrial scale

“…Also for LEC growth of III-V compounds like GaAs [10] and InP [11][12][13] SMFs were introduced very successfully. Characteristic thermal asymmetries, produced by axial and transversal fields, could be depressed by the use of cusp fields [14,15]. Even a spontaneous melt rotation (e.g.…”

Modelling of a magnetohydrodynamics free surface problem arising in Czochralski crystal growth

“…Desired properties, to obtain high-quality crystals, include reduction of radial and axial temperature gradients and a flow field close to an axisymmetric configuration, to homogenize solute concentration. In addition, it is desired to damp out flow instabilities, or to overpower turbulence, which otherwise lead to deterioration of the final crystal's properties; see, for example, [9][10][11][12][13][14][15][16].…”