Effect of Ag on the microstructure and electrical properties of ZnO

Kuo, Shu-Ting; Tuan, Wei‐Hsing; Shieh, Jay; Wang, Sea-Fue

doi:10.1016/j.jeurceramsoc.2007.02.215

Cited by 80 publications

(44 citation statements)

References 16 publications

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“…From the XRD patterns and as it is evident from previous reports [7,10,12,13,2123], the silver-doped ZnO lms have preferred orientation in the (002) direction. Besides, the additional low-intensity peaks corresponding to (100) and (101) directions in ZnO are observed.…”

Section: Xrd Analysissupporting

confidence: 64%

“…(0.074 nm) they either substitute ions of Zn 2+ that leads to distortion of the unit cell or segregate at the grain boundaries of ZnO and hence induce considerable disorder and faster grow of ZnO grains [13,23]. Ag + would preferentially choose to sit in the vicinity of grain boundaries due to its large ionic radius.…”

Section: Xrd Analysismentioning

confidence: 99%

“…It is a wide bandgap oxide semiconductor with a direct energy gap of about 3.37 eV and high exciton binding energy of 60 meV at room temperature. Though, ZnO absorbs (UV) radiation due to band-to-band transition, it can be used as transparent conductive oxide thin lm, mainly for applications such as solar cells, liquid crystal displays and heat mirrors [13].…”

Section: Introductionmentioning

confidence: 99%

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Structural Properties and Temperature Behaviour of Optical Absorption Edge in Polycrystalline ZnO:X (Cu,Ag) Films

et al. 2013

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Silver-and copper-doped ZnO lms were prepared by radio-frequency magnetron sputtering on glass substrates. The inuence of dopants content on the structural, morphological properties as well as on evolution of the optical absorption edge was considered. It has been found that Ag-and Cu-doped ZnO lms are characterized by wurtzite crystalline structure with the preferred direction of crystalline orientation (002). The sizes of grains within the lms were found to be dependent on the type of dopant. The temperature evolution of the optical absorption edge is described by the modied Urbach rule that reects polycrystalline nature of the material. The corresponding parameters concerning electron (exciton) phonon interaction, phonon energies and temperature changes of the band-gap were determined and analysed.

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Section: Xrd Analysissupporting

confidence: 64%

Section: Xrd Analysismentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Structural Properties and Temperature Behaviour of Optical Absorption Edge in Polycrystalline ZnO:X (Cu,Ag) Films

et al. 2013

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“…Transparent conductive ZnO films can be prepared by different methods, such as activated reactive or electron beam evaporation, magnetron-or electron beam-sputtering, spray pyrolysis, chemical vapor deposition with many variants, and recently by sol-gel technique (Ilican et al 2008;Zhao et al 2006). The structural, physical, and electrical properties of ZnO films were governed by deposition parameters and post-treatment (Mondal et al 2008;Jeong et al 2007;Kuo and Tuan 2007). To improve these properties can be doped with some elements.…”

Section: Introductionmentioning

confidence: 99%

Energy band diagram of In: ZnO/p-Si structures deposited using chemical spray pyrolysis technique

2013

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Near-ideal In: ZnO/p-Si heterojunction band edge lineup has been investigated with aid of I-V and C-V measurements. The heterojunction was manufactured by spray pyrolysis method of (Zn (CH 3 COO) 2 Á2H 2 O) at different indium doping concentrations on monocrystalline p-type silicon. The experimental data of the conduction band offset DEc and valence band offset DEc were compared with theoretical values. The band offset DEc = 0.45 eV and DEv = 1.65 eV obtained at 300 K. The energy band diagram of In: ZnO/p-Si HJ was constructed. C-V measurements depict that the junction was an abrupt type and the built-in voltage was determined from C -2 -V plot.

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“…However, silver ion is considered to have a small solubility limit in ZnO at the equilibrium state, because Ag ion has the different valence state of Zn and the large ionic radius rather than Zn, i.e., Ag behaves as an incompatible element in the ZnO. 8), 9) In this study, Ag source was formed by ion implantation in a polycrystalline ZnO substrate. The purpose of this study is to determine the solubility limit and then evaluate the diffusion phenomenon of Ag such as the lattice and grain boundary diffusion in ZnO.…”

Section: Introductionmentioning

confidence: 99%

Ion implantation and diffusion behavior of silver in zinc oxide

Sakaguchi

Watanabe

Ohgaki

et al. 2010

J. Ceram. Soc. Japan

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Silver implantation (75 keV, 2 × 10 14 ions/cm 2 ) in ZnO ceramics was carried out at room temperature to characterize the diffusion phenomenon. Annealing caused Ag evaporation from the sample. Results suggest that it is difficult to incorporate Ag into Zn site by annealing. The Ag profile with the monotonous decrease in concentration below 3 × 10 17 /cm 3 was observed in ZnO annealed at 900°C. Above results become the basic results for producing the ZnO sensor used the reaction at surface and the grain boundary.

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Effect of Ag on the microstructure and electrical properties of ZnO

Cited by 80 publications

References 16 publications

Structural Properties and Temperature Behaviour of Optical Absorption Edge in Polycrystalline ZnO:X (Cu,Ag) Films

Structural Properties and Temperature Behaviour of Optical Absorption Edge in Polycrystalline ZnO:X (Cu,Ag) Films

Energy band diagram of In: ZnO/p-Si structures deposited using chemical spray pyrolysis technique

Ion implantation and diffusion behavior of silver in zinc oxide

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