Effect of air annealing on the optical electrical and structural properties of In2S3 films

Bedır, Metin; Öztaş, Mustafa

doi:10.1007/s11431-008-0074-0

Cited by 19 publications

(6 citation statements)

References 22 publications

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“…These values position ALD-grown In 2 S 3 thin films as an interesting electronic material that compares well to In 2 S 3 thin films grown by other methods. 50,51 Like most polycrystalline films, these value fall short of bulk single crystal mobilities, which are reported to reach 200 cm 2 /(V•s). 52 A relatively constant carrier concentration is observed near ∼2 × 10 18 cm −3 at all growth temperatures.…”

Section: ■ Results and Discussionmentioning

confidence: 91%

“…This is an order of magnitude higher than that of films produced from the In(acac) 3 ALD process (10 16 –10 17 cm –3 ), but significantly lower than carrier concentrations reported for In 2 S 3 films grown by some other methods. , For undoped In 2 S 3 films, the intrinsic donors are sulfur vacancies and indium interstitials. , These electronic properties suggest that growth with In(amd) 3 forms more of these sites than growth with In(acac) 3 , giving higher carrier concentrations. It is also likely in In(acac) 3 grown films (given their large deficiency of S) , that these donor sites are reduced by oxygen incorporation in the films . The overall effect of growth temperature is an order of magnitude increase in conductivity that tracks the increasing mobility and charge carrier concentration with increasing growth temperature.…”

Section: Resultsmentioning

confidence: 99%

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Oxygen-Free Atomic Layer Deposition of Indium Sulfide

McCarthy¹,

Weimer

Emery³

et al. 2014

ACS Appl. Mater. Interfaces

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Atomic layer deposition (ALD) of indium sulfide (In2S3) films was achieved using a newly synthesized indium precursor and hydrogen sulfide. We obtain dense and adherent thin films free from halide and oxygen impurities. Self-limiting half-reactions are demonstrated at temperatures up to 225 °C, where oriented crystalline thin films are obtained without further annealing. Low-temperature growth of 0.89 Å/cycle is observed at 150 °C, while higher growth temperatures gradually reduce the per-cycle growth rate. Rutherford backscattering spectroscopy (RBS) together with depth-profiling Auger electron spectroscopy (AES) reveal a S/In ratio of 1.5 with no detectable carbon, nitrogen, halogen, or oxygen impurities. The resistivity of thin films prior to air exposure decreases with increasing deposition temperature, reaching <1 Ω·cm for films deposited at 225 °C. Hall measurements reveal n-type conductivity due to free electron concentrations up to 10(18) cm(-3) and mobilities of order 1 cm(2)/(V·s). The digital synthesis of In2S3 via ALD at temperatures up to 225 °C may allow high quality thin films to be leveraged in optoelectronic devices including photovoltaic absorbers, buffer layers, and intermediate band materials.

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Section: ■ Results and Discussionmentioning

confidence: 91%

Section: Resultsmentioning

confidence: 99%

Oxygen-Free Atomic Layer Deposition of Indium Sulfide

McCarthy¹,

Weimer

Emery³

et al. 2014

ACS Appl. Mater. Interfaces

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“…Thus, when b-In 2-x Al x S 3 samples annealed in air, the oxygen impurities are adsorbed on the surface of b-In 2-x Al x S 3 thin films. The presence of oxygen in the thin films could strongly modify the properties of the grain boundaries and this probably caused a decrease in electrical resistivity of the films [24]. For this reason, these thin films were annealed in air at 400°C on the hotplate, after their elaboration for different annealing times (15,30 and 45 min).…”

Section: Electrical Analysis Of Annealed B-in 2-x Al X S 3 (T = 646 Nmentioning

confidence: 99%

Characterization of β-In2−xAlxS3 thin films prepared by chemical spray pyrolysis technique

Ajili

Kamoun

2014

J Mater Sci: Mater Electron

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Indium sulfide (In 2 S 3 ) is a good window or buffer layer for photovoltaic application. In this work, b-In 2-x Al x S 3 thin films with different thicknesses (400, 442, 646 and 714 nm) are successfully synthesized on heated glass substrates using a chemical spray pyrolysis technique. The thin film thickness effect on the structural, optical and photoluminescence (PL) properties of b-In 2-x Al x S 3 material is studied. The X-ray diffraction patterns suggest the formation of b-In 2 S 3 cubic phase preferentially oriented towards (400) direction. The level of the residual dislocation seems to be reduced to 3.12 9 10 9 lines mm -2 for the optimum thickness (646 nm) for which the b-In 2-x Al x S 3 film crystallinity is the best one. In order to enhance the electrical properties, b-In 2-x Al x S 3 layers are annealed in air at 400°C for different annealing times (15, 30 and 45 min). The minimum resistivity, maximum Hall mobility and carrier concentration are found for b-In 2-x Al x S 3 films annealed for 30 min. All samples have high transmittance of about 75 % but the wide band gap (E g = 3.32 eV) is obtained for this optimum thickness. This result indicates good optical quality of b-In 2-x Al x S 3 layers. Defects-related PL properties are also discussed.

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“…Many routes of preparation strategies had been applied for getting high-quality In 2 S 3 thin films, that were successfully synthesized using numerous techniques such as close space evaporation 11 , thermal evaporation 12 , 13 , chemical bath deposition 14 , 15 , physical vapor deposition 16 and spray pyrolysis 17 , 18 . It is found that the physical properties of the In 2 S 3 are strongly dependent on both the deposition technique and deposition conditions such as temperature and pressure, as well as annealing time 19 – 25 .…”

Section: Introductionmentioning

confidence: 99%

New fabrication method for di-indium tri-sulfuric (In2S3) thin films

Ali

Elhaes

Hassen

2022

Sci Rep

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Di-indium tri-sulfuric (In2S3) thin films are fabricated with annealing indium thin films in a sulfur environment. The effect of both annealing temperature and pressure on the structure, morphology, Raman, and photoluminescence (PL) spectroscopy has been studied. The X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM) of the prepared thin films showed different structural phases and morphology with varying annealing temperature and pressure. Energy dispersive X-ray (EDX) analysis confirmed the chemical composition and the atomic ratio of In/S for the In2S3 thin films. The optimum annealing conditions of In2S3 thin films are 550 °C and 100 Torr. The outcome results revealed a new good growth method for In2S3 thin films to be used for different applications.

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Effect of air annealing on the optical electrical and structural properties of In2S3 films

Cited by 19 publications

References 22 publications

Oxygen-Free Atomic Layer Deposition of Indium Sulfide

Oxygen-Free Atomic Layer Deposition of Indium Sulfide

Characterization of β-In2−xAlxS3 thin films prepared by chemical spray pyrolysis technique

New fabrication method for di-indium tri-sulfuric (In2S3) thin films

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