“…For solar cells and diodes fabrication, impurities of high ionic radii are normally preferred as they decrease impurity diffusion towards the p-n junction. In this pursue, the effect of different dopants like Ti [3,14], Sn [4,15,16], F [17,18], In [5,[19][20][21], Sc [21], Y [21], Al [22,23], Sm [24], Mn [7], Zn [25] and Ga [20,24] on the properties of CdO thin film has been studied. The ionic radii of Ga 3+ (0.76 Å), In 3+ (0.94 Å), Sc 3+ (0.89 Å), Sn 4+ (0.69 Å) and Ti 4+ (0.69 Å) are smaller than that of Cd 2+ (1.09 Å), which compresses the CdO lattice, while the addition of F 3+ (1.19 Å), Al 3+ (1.18 Å), Y 3+ (1.04 Å) and Sm 3+ (1.04 Å) with an ionic radii equal or greater than Cd 2+ does not significantly alter the lattice parameters.…”