2012
DOI: 10.1016/j.physb.2012.06.044
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Effect of Al incorporation on the structural, morphological, optoelectronic and transport properties of PbS thin films

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Cited by 44 publications
(19 citation statements)
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“…Sn and Sb doping of PbS thin films can significantly change band gap values [24,25]. The increases in the electrical conductivity of PbS films are due to interstitially doped Al atoms that act as donor impurities [26,27]. Mn, Cd and co-doped PbS nanocrystals have also been investigated [28].…”
Section: Introductionmentioning
confidence: 99%
“…Sn and Sb doping of PbS thin films can significantly change band gap values [24,25]. The increases in the electrical conductivity of PbS films are due to interstitially doped Al atoms that act as donor impurities [26,27]. Mn, Cd and co-doped PbS nanocrystals have also been investigated [28].…”
Section: Introductionmentioning
confidence: 99%
“…As in the figure, it is clearly identified that the energy gap is low for 6% PbS:Ag, which absorbs more visible light than the other prepared films. Preetha et al have presented the similar band gap variations for aluminum (Al)‐doped PbS films using chemical bath deposition method.…”
Section: Resultsmentioning
confidence: 99%
“…This indicates that the films are under strain. It was previously reported that lowering of grain boundary and crystal defects in as prepared thin films are the results of enhanced nanocrystallite size (Preetha and Remadevi, 2012). The value of crystalline size, average internal strain calculated for all the films has been shown in Table 1.…”
Section: Average Crystallite Size and Internal Strainmentioning
confidence: 87%