Effect of Alkaline Earth Metal on AZrOx (A = Mg, Sr, Ba) Memory Application

Abstract

Zr can be stabilized by the element selected, such as Mg-stabilized Zr (MSZ), thus providing MSZ thin films with potentially wide applications and outstanding properties. This work employed the element from alkaline earth metal stabilized Zr to investigate the electrical properties of sol–gel AZrOx (A = alkaline earth metal; Mg, Sr, Ba) as dielectric layer in metal-insulator–metal resistive random-access memory devices. In addition, the Hume–Rothery rule was used to calculate the different atomic radii of elements. The results show that the hydrolyzed particles, surface roughness, and density of oxygen vacancy decreased with decreased difference in atomic radius between Zr and alkaline earth metal. The MgZrOx (MZO) thin film has fewer particles, smoother surface, and less density of oxygen vacancy than the SrZrOx (SZO) and BaZrOx (BZO) thin films, leading to the lower high resistance state (HRS) current and higher ON/OFF ratio. Thus, a suitable element selection for the sol–gel AZrOx memory devices is helpful for reducing the HRS current and improving the ON/OFF ratio. These results were obtained possibly because Mg has a similar atomic radius as Zr and the MgOx-stabilized ZrOx.

Multi-Level Resistive Al/Ga2O3/ITO Switching Devices with Interlayers of Graphene Oxide for Neuromorphic Computing

“…Finally, graphene was obtained in two centrifugation steps at 6000× g rpm for 3 h. A graphene oxide solution was obtained by dissolving graphene in water. The graphene oxide solution was then spin-coated onto Ga 2 O 3 /ITO/glass samples at 700/1000 rpm for 20/40 s and vacuum baked at 60 °C for 10 min to obtain graphene oxide films [ 23 , 24 ]. Finally, the 66 nm Al top electrode (TE) patterned by a shadow mask with 0.25 mm 2 holes was deposited on the GO/Ga 2 O 3 /ITO/glass sample using DC sputtering.…”

Resistive Switching Memory Cell Property Improvement by Al/SrZrTiO3/Al/SrZrTiO3/ITO with Embedded Al Layer

“…Moreover, the sol-gel process has advantages, such as low fabrication temperature, low cost, and easy adjustment of proportions. This process can be applied in numerous devices [10]. Based on the above advantages and research results, in this work, we utilized Zr in the doping process to fabricate SrZrTiO 3 (SZT) using the sol-gel process for RRAM insulators.…”