Effect of alloying BaTiO3 with BiZn1/2Ti1/2O3 on polarization reversal

Abstract

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Multistep stochastic mechanism of polarization reversal in rhombohedral ferroelectrics

“…Therefore, in the present work, we apply the hybrid MSM-IFM model, derived in Section 2C, together with the time-dependent expressions for strain (36)(37)(38) to the analysis of the polarization and strain response of the KNN-based ceramic during the 22 polarization reversal. We note that both formulas for polarization, (16), and strain, (36), are assumed to be averaged over the whole polycrystalline system and neglect electric and elastic interactions [56] between different switching regions.…”

“…Particularly, optimization of the switching kinetics is significant for the prospective multilevel data storage [11][12][13][14]. However, the understanding of the underlying mechanisms is still incomplete [15][16][17], especially because, for most ferroelectrics, polarization switching involves complicated ferroelastic switching processes [18].…”

“…However, the identified fractions of 180° and non-180° processes remain controversial in literature ranging from scenarios with exclusively non-180° switching events [14,25] to those with partial non-180° processes [22][23][24]26,27], predominantly 180° processes [28,29] or exclusively 180° switching events [30]. Very recently, it was shown that these fractions could be substantially affected by the composition [16].…”

Time-resolved piezoelectric response in relaxor ferroelectric (Pb0.88La0.12)(Zr0.52Ti0.48)O3 thin films

“…However, the online version of record will be different from this version once it has been copyedited and typeset. The piezoelectric properties of ferroelectric thin films are studied by various methods, including piezoresponse force microscopy (PFM), interferometry [18], and in situ and time-resolved X-ray diffraction (XRD) during the application of an electric field [19,20,21,22,23,24,25,26,27]. While PFM is a local probe and prone to surface artifacts, XRD provides access to the piezoelectrically-induced strain within the complete thickness of the thin film and on a large lateral scale with a strain resolution of 10 -…”