Effect of AlN Addition on the Consolidation of SiC with Stacking-Disordered Structure

Abstract

Consolidation of SiC powder with stacking disordered structure was accelerated by milling with the AlN as the additive. SiC powders without the additive were sintered at 1900c C to a density of 99ಚ. The grain size of the sintered material was approximately 500 nm. On the other hand, with AlN as additive, the sintering temperature to reach a density of 98ಚ was reduced to 1700c C by the addition of 1.0 molಚ AlN. The grain size of this material was approximately 50 nm. The effect of AlN addition on SiC sintering with disorder-order transformation was evaluated by shrinkage profile, XRD analysis, and TEM observation.

Preparation of CuIn(S,Se)2 films by PLD of precursor layers and post‐annealing and their application to solar cells

“…The grain growth and sintering is usually enhanced with the fine powder with many crystalline defects. As one of example for sintering and grain growth of ceramics, the role of disorder-order transformation in consolidation of SiC was reported by Ohyanagi et al [10][11][12][13]. They investigated the ordering of stacking-disordered SiC prepared from the elements by high energy ball milling during sintering process [12].…”

Use of Post‐heat Treatment to Obtain a 2H Solid Solution in Spark Plasma Sintering‐Processed AlN–SiC Mixtures

“…It has been reported that spark plasma sintering (SPS) can shorten the sintering time and lower the sintering temperature of AlN–SiC composites with Y 2 O 3 as sintering additive 19 . Shirai et al 20 carried out low‐temperature sintering of SiC nanopowder with a small amount of AlN using SPS. We have also reported that the SPS can provide dense AlN–SiC composites without sintering additives, which have a fine microstructure with smaller grains but comprise several solid solution phases 21 .…”