2018
DOI: 10.1109/tps.2018.2811381
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Effect of Aluminum Nitride on Discharge Mode Transition in Atmospheric Pressure He/O2 DBD

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Cited by 3 publications
(2 citation statements)
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“… a The thermal conductivity references of the materials are as follows: AlN, BaTiO 3 , and SiO 2 b The references for the relative permittivity of the materials are as follows: AlN, BaTiO 3 , and SiO 2 . The thermal conductivity and relative dielectric constants of SiO 2 , MCM-41, and SBA-15 are almost identical. …”
Section: Results and Discussionmentioning
confidence: 99%
“… a The thermal conductivity references of the materials are as follows: AlN, BaTiO 3 , and SiO 2 b The references for the relative permittivity of the materials are as follows: AlN, BaTiO 3 , and SiO 2 . The thermal conductivity and relative dielectric constants of SiO 2 , MCM-41, and SBA-15 are almost identical. …”
Section: Results and Discussionmentioning
confidence: 99%
“…In 2018, Zhang's group [66] compared the discharges of Al 2 O 3 and AlN dielectric plates using He/O 2 (0.2%-1%) as the working gas, a 2 mm gap distance, and a 20 kHz AC power supply to drive the plasma. They found that H-DBD could be obtained under certain ranges of applied voltage and O 2 percentage when using AlN as the dielectric.…”
Section: Effect Of Dielectric Materialsmentioning
confidence: 99%