Effect of ammoniating temperature on microstructure and optical properties of one-dimensional GaN nanowires doped with magnesium

GaN Nanowires Fabricated by Magnetron Sputtering Deposition

“…In Figure 24c, a large number of gossypine nanostructures are clearly observed, because of decomposition or sublimation of GaN grains at higher temperature, however, the amount of the GaN nanowires decrease, comparing with the sample shown in Figure 22b. Ammoniating temperature has great influence on the morphology of the GaN nanowires and with the increase in ammoniating temperature from 850 °C to 900 °C (Shi et al, 2011), the diameter, the length, and the quantity increase but their quantity and crystallinity decrease when the ammoniating temperature rises to 950 °C. The GaN grains cann't crystallize completely at lower temperature of 850 °C, however, the samples can decomposition or sublimation at higher temperature of 950 °C.…”

Growth and photoluminescence of zinc blende ZnS nanowires via metalorganic chemical vapor deposition

“…As is well known, one dimensional (1D) semiconductor nanowires have attracted considerable attention due to their potential applications in the nanooptics, nanoelectronics and nanomagnetics [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15]. As an important semiconductor material with wide band gap of 3.72 eV for the zinc blende phase and 3.77 eV for wurtzite phase at room temperature, zinc sulfide (ZnS) has attracted considerable research interest [16][17][18][19].…”