2010
DOI: 10.1002/adma.200903219
|View full text |Cite
|
Sign up to set email alerts
|

Effect of an Ultrathin TiO2 Layer Coated on Submicrometer‐Sized ZnO Nanocrystallite Aggregates by Atomic Layer Deposition on the Performance of Dye‐Sensitized Solar Cells

Abstract: Since the advent of dye-sensitized solar cells (DSCs), which have achieved $11% of power conversion efficiency (PCE) in TiO 2 -based photoelectrodes, a lot of efforts have been devoted to make low-cost, light-weight, high-performance photovoltaic devices. [1][2][3] Nanostructured metal oxides are one of key factors in determining the PCE of DSCs, because the nanostructured networks provide a huge surface area to accommodate a large quantity of dye molecules that relate to the light harvesting of a photoelectro… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

2
148
0

Year Published

2010
2010
2024
2024

Publication Types

Select...
7
2
1

Relationship

0
10

Authors

Journals

citations
Cited by 205 publications
(150 citation statements)
references
References 31 publications
2
148
0
Order By: Relevance
“…One approach to achieving structural control of local electron transfer dynamics at the oxide interface in dye-sensitized devices is by use of nanostructured core/shell electrodes (10)(11)(12). In this approach, a mesoporous network of nanoparticles is uniformly coated with a thin oxide overlayer prepared by atomic layer deposition (ALD).…”
mentioning
confidence: 99%
“…One approach to achieving structural control of local electron transfer dynamics at the oxide interface in dye-sensitized devices is by use of nanostructured core/shell electrodes (10)(11)(12). In this approach, a mesoporous network of nanoparticles is uniformly coated with a thin oxide overlayer prepared by atomic layer deposition (ALD).…”
mentioning
confidence: 99%
“…19,20 Increasing the V oc and FF of ZnO cells can lead to a substantial improvement in their performance. Moreover, although ALD techniques are undoubtedly useful to control the formation of thin metal oxide layers, they require the use of a reactor equipped with a vaccum and evacuation system.…”
mentioning
confidence: 99%
“…The Voc increase in the coated samples, which is due to the electron concentration gradient between the silicon wafer and Ti02 layer due to their size difference, which can confine the electrons in the silicon wafer, resulting in a suppressed recombination and a higher Voc [16].…”
Section: � �----------------------------------mentioning
confidence: 99%