Effect of anion substitution onto structural and magnetic properties of chromium chalcogenides

Wontcheu, Joseph; Bensch, Wolfgang; Mankovsky, S.; Polesya, S.; Ebert, H.

doi:10.1016/j.progsolidstchem.2009.11.001

Cited by 17 publications

(18 citation statements)

References 92 publications

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“…Studies of the Cr-Se-Te system with different types of replacements have followed the evolution of AF (in Se based compounds) towards F (in Te based materials). [24][25][26][27][28][29] From our measurements, we can construct a similar phase diagram corresponding to both the Ti and V replacement. Both replacements expand the c parameter but the ratio c/a decreases (approaching the value corresponding to ideal CrSe 6 octahedra) with Ti substitution and increases with V substitution (see Figs.…”

Section: Discussionmentioning

confidence: 99%

Antiferromagnetism and ferromagnetism in layered1T-CrSe2with V and Ti replacements

et al. 2013

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We have studied the effect of substitution of Cr in metastable 1T -CrSe 2 by Ti and V on its structural and magnetic properties. The structural transitions observed between 165-180 K in the pure material are stomped by the doping. The pure compound has a magnetization corresponding to an antiferromagnetic (AF) ground state. On Ti substitution, we observe an increase of the lattice constants and a gradual passage towards a ferromagnetic state, while V replacement maintains AF order up to our highest doping, x V = 0.5. With our experimental results and the help of first-principles calculations, we construct the phase diagram of the system.

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Section: Discussionmentioning

confidence: 99%

Antiferromagnetism and ferromagnetism in layered1T-CrSe2with V and Ti replacements

et al. 2013

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“…A small change in composition changes the physical properties and makes them more fascinating as a material system to study. Wontcheu et al have shown the effect of anion substitution on the structural and magnetic properties of chromium chalcogenides [1]. The chromium-selenium system is a large family of compounds with large varieties of stable stoichiometries [e.g., Cr1-xSe, Cr2Se3, Cr3Se4, Cr5Se8, Cr7Se8, etc.].…”

Section: Introductionmentioning

confidence: 99%

Structural and magnetic properties of molecular beam epitaxy grown chromium selenide thin films

Roy

Dey

Pramanik

et al. 2020

Phys. Rev. Materials

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Chromium selenide thin films were grown epitaxially on Al2O3(0001) and Si(111)-(7×7) substrates using molecular beam epitaxy (MBE). Sharp streaks in reflection high-energy electron diffraction and triangular structures in scanning tunneling microscopy indicate a flat smooth film growth along the c-axis, and is very similar to that from a hexagonal surface. X-ray diffraction pattern confirms the growth along the c-axis with c-axis lattice constant of 17.39 Å. The grown film is semiconducting, having a small band gap of about 0.034 eV, as calculated from the temperature dependent resistivity. Antiferromagnetic nature of the film with a Néel temperature of about 40 K is estimated from the magnetic exchange bias measurements. A larger out-of-plane exchange bias, along with a smaller in-plane exchange bias is observed below 40 K. Exchange bias training effects are analyzed based on different models and are observed to be following a modified power-law decay behavior. as observed from neutron diffraction studies [6][7][8][9]. Because of Cr vacancies in alternate layers, the moment associated with Cr atoms located on two different layers are different due to different neighboring environment and this leads to the complexity in the magnetic structure below TN.Previously, chromium selenide systems have been studied to investigate their suitability as thermoelectric material for intermediate-temperature applications [10][11][12][13][14], intermediate temperature power generation [13], electrochemical sensors [15], etc. Several groups have studied the structural, magnetic, electrical and thermoelectric properties of single crystal Cr2+xSe3-x compounds grown using solid state reaction method [10][11][12][13]16], soft chemical and hydrothermal synthesis [15,17,18] and chemical vapor transport method [4,14,[19][20][21]. However, the studies focus mostly on the improvement in thermoelectric properties of transition-metal-doped bulk samples of Cr2Se3. The epitaxial growth and different physical properties of Cr2Se3 thin films are yet to be explored in detail. Molecular beam epitaxy (MBE) is a highly specialized technique used to grow ultra-high purity large-area epitaxial thin films with abrupt interfaces and with precise control over their thicknesses. Compared to other growth techniques, MBE offers greater control to incorporate dopants in thin films. This makes it even more suitable growth method, as the electrical, magnetic and thermoelectric properties of this material system can be largely varied with addition of transition-metal/chalcogen dopants [1, 9-13, 21,22].In this work, we report the epitaxial growth of Cr2Se3 thin films under ultra-high vacuum (UHV) directly on Al2O3(0001) and Si(111)-(7×7) surfaces using MBE. Interestingly, we show that the growth occurs along (001) direction (c-axis). We present the details of growth, structural, electrical and magnetic properties characterized by several in situ and ex situ techniques, e.g., reflection high energy electron diffraction (RHEED), x-ray diffraction (XRD), scanning...

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“…3 Several groups have studied the electronic and magnetic structures of Cr 2 Te 3 bulk samples theoretically 4,5 as well as experimentally. 1,[6][7][8][9][10][11] There are only a few reports of the epitaxial growth of Cr 1-δ Te thin films on GaAs(001) substrates. 2,[12][13][14][15] But, a detailed study of the structure, magnetic and transport properties of Cr 2 Te 3 thin films is lacking.…”

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confidence: 99%

Perpendicular Magnetic Anisotropy and Spin Glass-like Behavior in Molecular Beam Epitaxy Grown Chromium Telluride Thin Films

et al. 2015

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Reflection high-energy electron diffraction (RHEED), scanning tunneling microscopy (STM), vibrating sample magnetometry, and other physical property measurements are used to investigate the structure, morphology, magnetic, and magnetotransport properties of (001)-oriented Cr2Te3 thin films grown on Al2O3(0001) and Si(111)-(7×7) surfaces by molecular beam epitaxy. Streaky RHEED patterns indicate flat smooth film growth on both substrates. STM studies show the hexagonal arrangements of surface atoms. Determination of the lattice parameter from the atomically resolved STM image is consistent with the bulk crystal structures. Magnetic measurements show the film is ferromagnetic, having a Curie temperature of about 180 K, and a spin glass-like behavior was observed below 35 K. Magnetotransport measurements show the metallic nature of the film with a perpendicular magnetic anisotropy along the c-axis.

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Effect of anion substitution onto structural and magnetic properties of chromium chalcogenides

Cited by 17 publications

References 92 publications

Antiferromagnetism and ferromagnetism in layered1T-CrSe2with V and Ti replacements

Antiferromagnetism and ferromagnetism in layered1T-CrSe2with V and Ti replacements

Structural and magnetic properties of molecular beam epitaxy grown chromium selenide thin films

Perpendicular Magnetic Anisotropy and Spin Glass-like Behavior in Molecular Beam Epitaxy Grown Chromium Telluride Thin Films

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