Effect of annealing in a various oxygen atmosphere on structural, optical, electrical and gas sensing properties of MoxOy thin films

Arfaoui, A.; Ouni, B.; Touihri, S.; Mhamdi, A.; Labidi, A.; Manoubi, T.

doi:10.1016/j.optmat.2015.03.017

Cited by 26 publications

(7 citation statements)

References 52 publications

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“…E g across all films was determined from linear extrapolation of the valence band region of their UPS spectra and found to be 3.90 ± 0.11 eV (SI, Figures S10–S13). Previously reported values in similar films range from 2.79 to 3.90, − and the annealed MoON films have a wider bandgap than pure MoO 3 prepared by alternative methods. − From Hall effect measurements the 400 cycle MoON films exhibit a conductivity of 10 S/cm, far higher than stoichiometric MoO 3 and consistent with previous findings that N-doped molybdenum oxide materials exhibit much higher conductivity than MoO 3 materials. ,, While the wide bandgap observed via UPS suggests an insulating film, the conductivity may result from subgap states generated by N-doping …”

Section: Resultssupporting

confidence: 86%

“…The extinction coefficient, k , remains near zero at visible light wavelengths and increases as the wavelength decreases toward 300 nm, consistent with UPS measurements (SI, Figure S24). The refractive index of the films is lower than values reported for both stoichiometric and substoichiometric MoO 3 films. ,, However, the refractive index of porous molybdenum oxide films decreases with decreasing density, , to even below the refractive index of SiO 2 ( n = 1.45). The density of ALD-grown films was determined by XRR to be 2.8 ± 0.2 g/cm 3 (Figures S31–S34), much lower than that of crystalline MoO 3 (4.80 g/cm 3 ) and similar to observations made in previous reports. , These data indicate a high degree of porosity in ALD-grown MoON films, which consist of ca.…”

Section: Resultsmentioning

confidence: 60%

“…The refractive index of the films is lower than values reported for both stoichiometric and substoichiometric MoO 3 films. 95,96,104 However, the refractive index of porous molybdenum oxide films decreases with decreasing density, 105,106 to even below the refractive index of SiO 2 (n = 1.45). The density of ALD-grown films was determined by XRR to be 2.8 ± 0.2 g/cm 3 (Figures S31−S34), much lower than that of crystalline MoO 3 (4.80 g/cm 3 ) and similar to observations made in previous reports.…”

Section: ■ Experimental Sectionmentioning

confidence: 99%

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Volatile Hexavalent Oxo-amidinate Complexes: Molybdenum and Tungsten Precursors for Atomic Layer Deposition

Mouat¹,

Mane

Elam

et al. 2016

Chem. Mater.

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New complexes MoO2(tBuAMD)2 (1) and WO2(tBuAMD)2 (2) (AMD = acetamidinato) are synthesized and fully characterized as precursors for atomic layer deposition (ALD). They contain metal-oxo functionalities not previously utilized in ALD-type growth processes and are fully characterized by 1H and 13C NMR, X-ray diffraction (XRD), Fourier transform infrared, thermogravimetric analysis, single-crystal XRD, and elemental analysis. Guided by quartz-crystal microbalance studies, ALD growth methodologies for both complexes have been developed. Remarkably, these isostructural compounds exhibit dramatic differences in ALD properties. Using 1 and O3, amorphous, ultrathin molybdenum oxynitride (MoON) films are grown on Si(100) wafers. Using 2 and H2O yields amorphous WO3 films on Si(100) wafers that crystallize as WO3 nanowires upon annealing. Although 1/H2O and 2/O3 growth was attempted, effective ALD growth could only be obtained with 1/O3 and 2/H2O, underscoring reactivity differences in these precursors. Film thicknesses, compositions, and optical and electrical parameters are characterized by variable angle spectroscopic ellipsometry, X-ray reflectivity, grazing incidence X-ray diffraction, X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, and atomic force microscopy techniques. The hitherto unknown ALD chemistry of group VI metal-oxo compounds lays a foundation for their use in the ALD synthesis of heterogeneous catalysts.

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Section: Resultssupporting

confidence: 86%

Section: Resultsmentioning

confidence: 60%

Section: ■ Experimental Sectionmentioning

confidence: 99%

See 1 more Smart Citation

Volatile Hexavalent Oxo-amidinate Complexes: Molybdenum and Tungsten Precursors for Atomic Layer Deposition

Mouat¹,

Mane

Elam

et al. 2016

Chem. Mater.

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“…The model provided a good match to the measured transmittance (supplementary information SI.7). [47][48][49][50][51][52] The transmittance spectra are also in keeping with other reports from literature, and the transmittance generally decreases with increasing reduction. 27,[53][54][55] The total thickness of the films matches well to the thickness obtained by profilometry and the optical band gap of the non-treated sample is in good agreement with other observed values in the 3.2 eV region for MoO3 (SI.5).…”

Section: Resultssupporting

confidence: 89%

Tailoring properties of nanostructured MoO3−x thin films by aqueous solution deposition

Inzani

Nematollahi

Selbach

et al. 2018

Applied Surface Science

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Molybdenum oxide films are required for a large range of optical, electronic and catalytic applications, and optimal film characteristics are similarly broad. Furthermore, the layered crystal structure of MoO3 is suited to nanostructuring, which can be adapted to enhance the film properties. Here, we present a simple, aqueous route to MoO3 thin films and attain nanostructured morphologies by control of solution parameters. Smooth and homogeneous thin films were achieved by control of the molecular species in solution by pH. The sensitivity of film quality to pH was demonstrated with the addition of PVA to the solution, which resulted in large spherical particulates on the surface. Film thickness was adjusted from 10 to 60 nm, whilst maintaining good film quality, by changing the solution concentration. Moreover, the grain size and nanocrystallite orientation varied with solution concentration. The importance of film morphology is revealed in the compositional changes of the films during hydrogen reduction, with differences in breakdown of film coverage and growth of reduced phases. Furthermore, spectroscopic ellipsometry was used to determine the optical properties of the films. This revealed changes in the dielectric function and band gap that were dependent on the level of reduction. The nanoscale morphologies presented demonstrate the potential to precisely control film morphology, dimensions, oxygen stoichiometry and phase composition by a low-cost wet chemical route.

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“…AC conductivity measurements have been widely used to investigate the frequency and the temperature dependences of the a.c. conductivity, dielectric constant and dielectric loss with a view to understand the conduction mechanism involved in polycrystalline structure of many oxides [11][12][13]. As previously reported, several studies show that the real part of the a.c. * Author for correspondence (hajlakhdarmourad@gmail.com) conductivity as a function of frequency and temperature of various oxides elaborated in our laboratory obeys the universal power law of Jonscher [14][15][16][17][18][19]. According to the literature, several researchers studied the structural, optical and electrical properties of antimony oxide.…”

Section: Introductionmentioning

confidence: 96%

Structural, dielectric and a.c. conductivity study of Sb2O3 thin film obtained by thermal oxidation of Sb2S3

et al. 2016

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This work highlights some physical properties of Sb 2 O 3 thin films obtained through heat treatment of Sb 2 S 3 thin films under an atmospheric pressure at 400 • C. The obtained material is characterized by X-ray diffraction and impedance spectroscopy. X-ray diffraction analysis shows that Sb 2 O 3 thin films were crystallized in cubic structure having a preferential growth along (222) plane. The grain size is found to be around 65 nm. The electrical conductivity was studied using impedance spectroscopy technique in the frequency range from 5 Hz to 13 MHz at temperatures lying in 638-698 K domain. Besides, the frequency and temperature dependence of the complex impedance, a.c. conductivity and complex electric modulus have been investigated.

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Effect of annealing in a various oxygen atmosphere on structural, optical, electrical and gas sensing properties of MoxOy thin films

Cited by 26 publications

References 52 publications

Volatile Hexavalent Oxo-amidinate Complexes: Molybdenum and Tungsten Precursors for Atomic Layer Deposition

Volatile Hexavalent Oxo-amidinate Complexes: Molybdenum and Tungsten Precursors for Atomic Layer Deposition

Tailoring properties of nanostructured MoO3−x thin films by aqueous solution deposition

Structural, dielectric and a.c. conductivity study of Sb2O3 thin film obtained by thermal oxidation of Sb2S3

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