2012
DOI: 10.1016/j.materresbull.2012.06.001
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Effect of annealing on conversion efficiency of nanostructured CdS/CuInSe2 heterojunction thin film solar cell prepared by chemical ion exchange route at room temperature

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Cited by 9 publications
(3 citation statements)
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“…Alkali atoms, however, are not the only impurities in CIGSe. The CIGSe thin films synthesized by coevaporation techniques in vacuum can be in contact with air after the alkali-metal post-deposition treatment when the CIGSe films are rinsed with water to remove the excess alkali metals and secondary phases from the surface. , Oxygen and hydrogen atoms are also found in the CIGSe lattice after air annealing of the cells, which improves the power conversion efficiency. ,, Furthermore, oxygen atoms can diffuse from the back contact or the buffer layer (e.g., Zn­(O, OH) layer) into CIGSe . Water vapor can be deliberately introduced into the growth chamber during the growth of CIGSe films to increase the hole carrier density and conductivity .…”
Section: Introductionmentioning
confidence: 99%
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“…Alkali atoms, however, are not the only impurities in CIGSe. The CIGSe thin films synthesized by coevaporation techniques in vacuum can be in contact with air after the alkali-metal post-deposition treatment when the CIGSe films are rinsed with water to remove the excess alkali metals and secondary phases from the surface. , Oxygen and hydrogen atoms are also found in the CIGSe lattice after air annealing of the cells, which improves the power conversion efficiency. ,, Furthermore, oxygen atoms can diffuse from the back contact or the buffer layer (e.g., Zn­(O, OH) layer) into CIGSe . Water vapor can be deliberately introduced into the growth chamber during the growth of CIGSe films to increase the hole carrier density and conductivity .…”
Section: Introductionmentioning
confidence: 99%
“…20,23−26 Oxygen and hydrogen atoms are also found in the CIGSe lattice after air annealing of the cells, which improves the power conversion efficiency. 7,8,27 Furthermore, oxygen atoms can diffuse from the back contact or the buffer layer (e.g., Zn(O, OH) layer) into CIGSe. 28 Water vapor can be deliberately introduced into the growth chamber during the growth of CIGSe films to increase the hole carrier density and conductivity.…”
Section: ■ Introductionmentioning
confidence: 99%
“…Although this device performance is not as good as those high performance CIGS devices, but when compared to CIGS solar cells without selenization/sulfurization process, this efficiency is comparable or even better than those published in literature [11,97,98] The device performance could be further improved by increasing the grain size of the absorber materials. To achieve this, the solar cells will be fabricated using pre-synthesized large size particles incorporated into the absorber thin film and this will be discussed in subsequent chapters.…”
Section: Demonstration Of Cuins2 Solar Cellmentioning
confidence: 56%