2011
DOI: 10.1016/j.jallcom.2011.07.062
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Effect of annealing on pulsed laser deposited zirconium oxide thin films

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Cited by 21 publications
(9 citation statements)
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“…2(a) and (b) show the XPS spectra of the material and the magnified Zr peak region, respectively. The Ti 2p, O 1s, C 1s, and Zr 3d peaks were observed at 458.7, 530.3, 291.1, and 182.3, respectively; an additional peak was present at 184.7 eV [26][27][28][29]. In the Zr 3d spectra (Fig.…”
Section: Resultsmentioning
confidence: 87%
See 1 more Smart Citation
“…2(a) and (b) show the XPS spectra of the material and the magnified Zr peak region, respectively. The Ti 2p, O 1s, C 1s, and Zr 3d peaks were observed at 458.7, 530.3, 291.1, and 182.3, respectively; an additional peak was present at 184.7 eV [26][27][28][29]. In the Zr 3d spectra (Fig.…”
Section: Resultsmentioning
confidence: 87%
“…The Zr oxide-post-treatment was accomplished by submerging the prepared photoelectrodes in a 40-mM zirconium butoxide (Zr (OC 4 H 3 ) 4 ) solution of 1-butanol for 30 min at 70 C and then by calcining the samples for 30 min at 475 C. This precisely mirrors the TiCl 4 post-treatment procedures in which calcining for 30 min was required to completely hydrolyze the TiCl 4 [28]. The prepared photoelectrodes were then immersed in a 0.4-mM N719 dye solution of ethanol (Ruthenizer 535-bis TBA, Solaronix) at room temperature for 24 h.…”
Section: Preparation Of Zr Oxide-post-treated Tio 2 Photoelectrodementioning
confidence: 99%
“…In order to reduce the usage of Ir while maintaining the lifetime of IrO 2 , doping other metal elements into IrO 2 , such as Ta, Sn, Zr, to form composite materials is a feasible way. Among these substances, ZrO 2 has low thermal conductivity, excellent chemical durability, and good thermal stability, making it used well in catalysis and surface chemistry applications . At the same time, ZrO 2 can stabilize the crystallinity of IrO 2 and promote more charge accumulation, thus increasing OER activity .…”
Section: Introductionmentioning
confidence: 99%
“…24 Even pulse laser deposition of ZrO 2 requires high deposition temperatures (400-600 C) or high-temperature treatment to promote crystallinity. 25,26 The ZrO 2 deposited from metal amide precursors can be a potential high-k dielectric for printed and exible electronics because of their low ALD temperature window (250-350 C) which many exible substrates can sustain. [27][28][29] The ALD-ZrO 2 from TDMAZr precursor was successfully deposited on graphene and nitrogen doped carbon nanotube (NCNT) nano-akes to study the nanocomposite materials.…”
Section: Introductionmentioning
confidence: 99%