Effect of annealing on solar blind photodetector based on β-Ga2O3 nanobelt grown by carbothermal reduction

Liu, Tao; Chen, Haifeng; Ma, Ke; Li, Xiaoyang; Du, Shuaibing; Lü, Qin; Liu, Xiangtai; Li, Lijun; Jia, Yifan; Wang, Shaoqing

doi:10.1016/j.spmi.2022.107157

Cited by 1 publication

(1 citation statement)

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“…Most Ga 2 O 3 /GaN heterointerfaces were developed by depositing Ga 2 O 3 on the GaN surface utilizing numerous techniques such as metalorganic chemical vapour deposition (MOCVD), sputtering, thermal oxidation, and pulse laser deposition. ,− Among various approaches, MOCVD has the demerit of using hazardous precursors that restrict the feasibility of mass production . Also, while depositing the film using sputtering and pulsed laser deposition (PLD), the substrate surface preparation may be critical in determining the adhesion; the setup cost is also very high. , On the other hand, thermal oxidation is a simple and convenient method for creating oxides directly on the substrate.…”

Section: Introductionmentioning

confidence: 99%

Ga₂O₃/GaN Heterointerface-Based Self-Driven Broad-Band Ultraviolet Photodetectors with High Responsivity

Varshney

Sharma

Vashishtha

et al. 2022

ACS Appl. Electron. Mater.

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The broad-band ultraviolet (BBUV) photodetectors (PDs) responding to multiple ultraviolet (UV) wavelengths (230–400 nm) have received considerable attention in various fields, such as missile warnings, fire alarms, astronomical imaging, etc. Due to increased demand for BBUVPDs, there is a need for energy-efficient self-driven devices. This work used a simple thermal oxidation process to develop a β-Ga2O3/GaN heterointerface-based device that shows ultrahigh performance in self-driven, low bias, and spectrally broad responsive range. The fabricated device exhibits excellent stable performance in the self-driven mode of operation with an ultrahigh responsivity of 1.2 × 103 mA W–1 and a very high external quantum efficiency of 3.8 × 102% under 266 nm light illumination. Further, the performance of the fabricated device in the photoconductive mode (@5 V) displays an ultrahigh responsivity of 2.21 × 105 mA W–1, a very low noise equivalent power of 10–14 W Hz–1/2, and a very high external quantum efficiency of 104%. Furthermore, the device responds to the illumination wavelength of 355 nm, with a responsivity of 0.74 mA W–1 (2.2 × 104 mA W–1) at a 0 V (5 V) applied bias. The study will boost the prospects for creating next-generation optoelectronic devices to comprehend and utilize Ga2O3/GaN heterointerface devices.

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Section: Introductionmentioning

confidence: 99%

Ga₂O₃/GaN Heterointerface-Based Self-Driven Broad-Band Ultraviolet Photodetectors with High Responsivity

Varshney

Sharma

Vashishtha

et al. 2022

ACS Appl. Electron. Mater.

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Effect of annealing on solar blind photodetector based on β-Ga2O3 nanobelt grown by carbothermal reduction

Cited by 1 publication

References 33 publications

Ga₂O₃/GaN Heterointerface-Based Self-Driven Broad-Band Ultraviolet Photodetectors with High Responsivity

Ga₂O₃/GaN Heterointerface-Based Self-Driven Broad-Band Ultraviolet Photodetectors with High Responsivity

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Effect of annealing on solar blind photodetector based on β-Ga2O3 nanobelt grown by carbothermal reduction

Cited by 1 publication

References 33 publications

Ga2O3/GaN Heterointerface-Based Self-Driven Broad-Band Ultraviolet Photodetectors with High Responsivity

Ga2O3/GaN Heterointerface-Based Self-Driven Broad-Band Ultraviolet Photodetectors with High Responsivity

Contact Info

Product

Resources

About

Ga₂O₃/GaN Heterointerface-Based Self-Driven Broad-Band Ultraviolet Photodetectors with High Responsivity

Ga₂O₃/GaN Heterointerface-Based Self-Driven Broad-Band Ultraviolet Photodetectors with High Responsivity