Effect of annealing on structural, morphological and optical properties of InSe thin films

Annealing-induced phase transformation in In10Se70Te20 thin films and its structural, optical and morphological changes for optoelectronic applications

“…42,43 The formation of more binary In-chalcogen phases might be due to the sufficient kinetic energy of indium, which allows more diffusion of indium with chalcogen lattices (here selenium and tellurium), with annealing temperature and forms bonds with Se and Te atoms. 44 In other words, the defects and unsaturated bonds are annealed out by forming many saturated bonds at boundaries with an increased annealing temperature. Such bonds cause structural variation in annealed In 10 Se 70 Te 20 lms.…”

Study of conduction mechanisms of InSeSb nano-chalcogenide alloys

“…Indium selenide is a flexible, ambient-stable semiconductor with strong charge carrier mobility which make it an interesting choice for nanoelectronics [11]. Owing to its good transparency in visible and NIR region, highest room temperature electron mobility among 2D semiconductors ≈10 3 cm 2 V −1 s −1 [12][13][14] and photoresponsivity it has attracted extensive attention in the field of electronics and optoelectronics and is emerging as a potential candidate for devices such as field-effect transistors (FETs), photodetector and solar cell applications [15,16]. In recent years, InSe FETs have been developed for electronics, optoelectronics, biosensors, and gas sensors [14].…”

Physical properties of InxSey and CuInSe2 thin films with potential application in radiation detectors

“…On the other hand, indium selenide (In x Se y ) is a very promising semiconductor material as a substitute of Cadmium Sulfide (CdS), which is usually used as window material in solar cells heterojunction. It is an interesting semiconductor with a direct band gap from 1.3-3.2 eV [5][6][7][8], indirect band gap value from 1.1-1.4 eV and five crystalline phases denoted by α, β, γ, δ and κ [5,6], as well as different stoichiometries like InSe 4 , In 2 Se 4 , In 2 Se 3 and In 6 Se 7 [8,9]. According to Harpreet Singh et al the observed change in the optical band gap of indium selenide thin film processed by thermal evaporation technique is due to change in density of localized and/or delocalized defect states in the forbidden gap with post-annealing treatment [7].…”

“…It is an interesting semiconductor with a direct band gap from 1.3-3.2 eV [5][6][7][8], indirect band gap value from 1.1-1.4 eV and five crystalline phases denoted by α, β, γ, δ and κ [5,6], as well as different stoichiometries like InSe 4 , In 2 Se 4 , In 2 Se 3 and In 6 Se 7 [8,9]. According to Harpreet Singh et al the observed change in the optical band gap of indium selenide thin film processed by thermal evaporation technique is due to change in density of localized and/or delocalized defect states in the forbidden gap with post-annealing treatment [7]. It has been studied as a very promising semiconductor material to be used as a window layer in photovoltaic devices, sensors, ionizing radiation detectors, optoelectronic devices and phase change random access memories (PRAM) [6,8,9].…”