Effect of annealing on the band bending and the overlayer morphology at Sb/III–V (110) interfaces

Esser, N.; Zahn, Dietrich R. T.; Müller, Carsten; Richter, Wolfgang; Stephens, C.; Whittle, Robert R.; McGovern, I.T.; Kulkarni, Sudhir A.; Braun, W.

doi:10.1016/0169-4332(92)90230-u

Cited by 27 publications

(8 citation statements)

References 23 publications

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“…1͑b͒. We note that it is qualitatively similar to the corresponding spectrum of Sb adsorbed on GaAs͑110͒, 13 in which case the overlayer is established to be nonreacted. The spectrum is rather broad and structureless, and it can be well fitted by two spin-orbit-split components.…”

Section: Discussionsupporting

confidence: 61%

Interaction between As and InP(110) studied by photoemission

Oscarsson

Ilver

et al. 2000

Phys. Rev. B

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Arsenic deposition on InP͑110͒ was studied by means of core-level and valence-band photoemission. By systematic spectral decompositions, it was found that the adsorption at room temperature is nonreactive. At elevated temperatures the As 3d spectra show drastic transformations, indicative of a P-As exchange reaction. The data can at this point be interpreted in terms of a recently proposed structure involving an As-covered InAs layer. Upon As redeposition the core-level spectra are clearly different from those observed prior to annealing, which means that the exchange reaction is irreversible. Angle-resolved valence-band spectra from the reacted surface are similar to those from clean InP͑110͒, but important differences are found, facilitating the identification of surface states.

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Section: Discussionsupporting

confidence: 61%

Interaction between As and InP(110) studied by photoemission

Oscarsson

Ilver

et al. 2000

Phys. Rev. B

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“…10,[12][13][14] Corresponding experimental values are 0.28 and −0.37 eV. 2 39,40 Conventional slab calculations were compared with the calculations, in which pseudohydrogenated slabs were used, and very similar SCLSs were obtained. Final state shifts for the 1 ϫ 1 GaAs͑110͒ and Sb/ GaAs͑110͒ surfaces were calculated by using 2 ϫ 2 surface unit cells.…”

Section: Calculational Methodsmentioning

confidence: 99%

Surface core-level shifts ofGaAs(100)(2×4)from first principles

et al. 2007

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First-principles calculations show that measured surface core-level shifts ͑SCLSs͒ of the GaAs͑100͒͑2 ϫ 4͒ surfaces can be described within the initial state effects. The calculated As 3d and Ga 3d SCLSs for the ␤2 and ␣2 reconstructions of the GaAs͑100͒͑2 ϫ 4͒ surfaces are in reasonable agreement with recent measurements. In particular, the results confirm that both the lower and the higher binding energy SCLSs, relative to the bulk emission in the As 3d photoelectron spectra, are intrinsic properties of the GaAs͑100͒͑2 ϫ 4͒ surfaces. The most positive and most negative As shifts are attributed to the third layer As atoms, which differs from the previous intuitive suggestions. In general, calculations show that significant SCLSs arise from deep layers, and that there are more than two SCLSs. Our previously measured As 3d spectra are fitted afresh using the calculated SCLSs. The intensity ratios of the SCLSs, obtained from the fits, show that as the heating temperature of the GaAs͑100͒͑2 ϫ 4͒ surface is increased gradually, the area of the ␣2 reconstruction increases on the surface, but the ␤2 phase remains within the whole temperature range, in agreement with previous experimental findings. Our results show that the combination of the experimental and theoretical results is a prerequisite for the accurate analysis of the SCLSs of the complex reconstructed surfaces.

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“…Such a splitting is expected on the basis of the spin-orbit split ting of the Ga 3d state into the J = 5/2 and J = 3/2 level. From photoemission spectroscopy investigations [27,28]. Thus, we are able to identify the contributions of both spin orbit split levels in the dielec-tric function.…”

Section: Vuv Ellipsometric Analysismentioning

confidence: 98%

VUV‐ellipsometry on GaN: Probing conduction band properties by core level excitations

Esser¹,

Rakel²,

Cobet³

et al. 2005

Physica Status Solidi (b)

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Spectral ellipsometry is a widely used method for analysing optical properties of materials. In particular electronic interband transitions of many semiconductor materials have been intensively studied employing ellipsometry from the near-infrared to the ultra-violet (UV) spectral range. Electronic excitations involving core-levels, on the other hand, have been a domain of synchrotron based X-ray absorption spectroscopy or electron loss spectroscopy. We apply spectral ellipsometry in the vacuum-UV spectral range to study core level excitations in GaN. The results proof that VUV-ellipsometry is a very versatile tool to obtain information on the p-like component of the density of states (DOS) related to the conduction bands of GaN. Excitations of the 3d core level of Ga are shown to be linked to the partial DOS at the Ga site within the lattice (complementary to the information obtained on nitrogen sites by X-ray absorption at the N1s edge).

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Effect of annealing on the band bending and the overlayer morphology at Sb/III–V (110) interfaces

Cited by 27 publications

References 23 publications

Interaction between As and InP(110) studied by photoemission

Interaction between As and InP(110) studied by photoemission

Surface core-level shifts ofGaAs(100)(2×4)from first principles

VUV‐ellipsometry on GaN: Probing conduction band properties by core level excitations

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