2013
DOI: 10.1080/00150193.2013.814019
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Effect of Annealing Process on Properties of Pb(Zr0.52Ti0.48)O3Thin Films Prepared by Sol-Gel Method

Abstract: The effect of the annealing process on properties of Pb (Zr 0.48 Ti 0.52 )O 3 (PZT) thin films prepared by sol-gel method was systematically studied. PZT film deposited by the single layer pre-crystallization processing followed by multilayer crystallization processing is easy to grow along (110) orientation. The PZT films were prepared by the single layer annealing process and show (100) preferred orientation at lower crystallization temperature, while (111) and (110) orientation growth is occurs easily in h… Show more

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Cited by 7 publications
(1 citation statement)
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“…The PZT was formed by solgel techniques on an oxidized silicon wafer coated with Pt/Ti (300 nm/20 nm). The PZT (INOSTEK; thickness 400 nm) was formed by a sol-gel process on an oxidized silicon wafer coated with Pt/Ti (300 nm/20 nm), following the procedures of Li et al 47 A 0.4-M precursor solution consisted of zirconium n-propoxide, titanium isopropoxide and lead acetate trihydrate with acetic acid and propyl alcohol as the solvents. The prepared solution was spin-cast onto the Pt/Ti/SiO2/Si (100) substrate at 3,000 r.p.m.…”
Section: Methodsmentioning
confidence: 99%
“…The PZT was formed by solgel techniques on an oxidized silicon wafer coated with Pt/Ti (300 nm/20 nm). The PZT (INOSTEK; thickness 400 nm) was formed by a sol-gel process on an oxidized silicon wafer coated with Pt/Ti (300 nm/20 nm), following the procedures of Li et al 47 A 0.4-M precursor solution consisted of zirconium n-propoxide, titanium isopropoxide and lead acetate trihydrate with acetic acid and propyl alcohol as the solvents. The prepared solution was spin-cast onto the Pt/Ti/SiO2/Si (100) substrate at 3,000 r.p.m.…”
Section: Methodsmentioning
confidence: 99%