Effect of Annealing Temperature on the Optical Properties of TiO₂ Thin Films Prepared by Pulse Laser Deposition

Abstract

ABSTRACT. TiO 2 thin films were prepared by pulse laser deposition technique on glass substrates with laser power 700 mJ and 900 shot at distance 1cm under vacuum of 10 -2 mbar with different annealing temperature (273, 373, 423)K. The influences of the annealing temperature on the optical properties of TiO 2 thin films were mainly investigated. TiO 2 is a wide band gap n-type semiconductor that has a wide range of applications. It was found that the optical properties of TiO 2 thin films were dependent on the annealing temperature. The values of optical energy gap decreases from (3.4 to 3.2) eV when increasing annealing temperature. The optical constants such as refractive index, extinction coefficient, real and imaginary dielectric constants as a function of wavelength were determined.

Influence of electrochemical reduction of selfdoping on the low temperature crystallization and photocatalytic activities of TiO2 nanotubes

“…It is well known that crystalline TONTs have wider band gaps than amorphous, indicating that ordering suppresses the localized levels that are usually present in the amorphous. These levels generate tails in the optical energy gap thus, reducing the energy gap of amorphous [39][40][41]. The same trend of reduction in band gap with improved crystallization is found in the present case too.…”

Growth and Characterization of Reactive DC Magnetron Sputtered Aluminum Titanate Thin Films

“…The films annealed at 600 o C showed the optical band gap of 4.50 eV. Such a decrease in the optical band gap with annealing temperature was also noticed in pulsed lased deposited and sputter deposited TiO 2 films [7,15,23]. In general, refractive index of the films decreased with increase of the wavelength.…”

“…The traditional dielectrics silicon dioxide (SiO 2 ) and silicon nitride (Si 3 N 4 ) have low dielectric constants, low capacitance and high leakage currents restricted to down scaling the devices [2]. For high performance of MIM capacitors, various high dielectric thin films such as Al 2 O 3 , HfO 2 , ZrO 2 , TiO 2 and Ta 2 O 5 have been investigated in order to achieve high capacitance density with reduced leakage current density [3][4][5][6][7]. Among these materials, aluminum titanate(Al 2 TiO 5 ) is a high-k dielectric with good radio frequency performance.…”

Effects of FeCl3 additives on optical parameters of PVA

“…Extinction coefficient versus wavelength was presented in the Figure 3 Same behavior of absorption coefficient was noticed in extinction coefficient with the increment of Fe content. ' Figure 4' depicts the relation between refractive index (n) and wavelength (λ) that obtained from the formula [12]:…”