2021
DOI: 10.1016/j.physb.2020.412569
|View full text |Cite
|
Sign up to set email alerts
|

Effect of annealing temperature on the thermoelectric properties of ZnInO thin films grown by physical vapor deposition

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
1
0

Year Published

2021
2021
2023
2023

Publication Types

Select...
6

Relationship

0
6

Authors

Journals

citations
Cited by 9 publications
(1 citation statement)
references
References 22 publications
0
1
0
Order By: Relevance
“…Meanwhile, the thicker film strategy can be combined with the post-deposition annealing treatment which commonly employed to improve the film's crystallinity [25][26][27] that induces grain size and boundary changes, hence influence the charge carrier concentration and charge mobility. 28 The grain boundaries modification also promotes phonon scattering thus increase S and simultaneously reduce κ of thermoelectric material. Such observation was reported shows improvement of the power factor, PF from 7 × 10 −5 to 4 × 10 −4 Wm −1 .K −2 as the annealing temperature was increased up to 400 °C and leading to remarkable low κ values (< 10 Wm −1 K −1 ).…”
mentioning
confidence: 99%
“…Meanwhile, the thicker film strategy can be combined with the post-deposition annealing treatment which commonly employed to improve the film's crystallinity [25][26][27] that induces grain size and boundary changes, hence influence the charge carrier concentration and charge mobility. 28 The grain boundaries modification also promotes phonon scattering thus increase S and simultaneously reduce κ of thermoelectric material. Such observation was reported shows improvement of the power factor, PF from 7 × 10 −5 to 4 × 10 −4 Wm −1 .K −2 as the annealing temperature was increased up to 400 °C and leading to remarkable low κ values (< 10 Wm −1 K −1 ).…”
mentioning
confidence: 99%