Effect of annealing temperature on the optical properties of Sb-ZnO thin films prepared using co-sputtering technique

Abstract

Transparent conducting oxide thin films of Sb-ZnO were prepared on optically flat quartz by radiofrequency (RF) sputtering method. The scan electron microscope was used to characterize the topological morphology of the surface of the as-prepared and annealed films at (300, 400, 470, and 525°C) for 4 h in air. The optical properties of the films were deliberated using their reflectance and transmittance spectra at normal incident light. The optical energy band gap energy (Eop ) values were found to increase by elevating the annealing temperatures. The dispersion curves of the refractive index of Sb-ZnOthin films were found to follow the single oscillator model. Optical parameters such as refractive index, real and imaginary parts of the dielectric constant, and optical conductivity were investigated.