2020
DOI: 10.1016/j.ceramint.2020.07.089
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Effect of annealing temperature on thermoelectric properties of zinc nitride thin films grown by thermal evaporation method

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Cited by 12 publications
(2 citation statements)
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“…Plasma-assisted pulsed laser deposition Zn3N2 [402] HfN [404] Plasma-enhanced atomic layer deposition Mo2N [419] NbN [421,422] TaN [423] Plasma-enhanced chemical vapor deposition AlN [183,184] Pulsed laser deposition Zn3N2 [401] TiN [403] NbN [405] Cu3N [406] AlN [188,190] Zn3N2 [370][371][372][373][374][375] CrN [377] CoN (Co target) [493] HfN [494] Hf3N4 [494,495] RF reactive magnetron sputtering HfN (HfN target) [367][368][369] ZnN (ZnN target) [366] TiN (Ti target) [376] AuN2 (Au target) [378] Zr3N4 [379] Co3N [380] Room temperature ion beam assisted sputtering NbN [496] Thermal decomposition Ca2N [497] Thermal evaporation Zn3N2 [398,399] Cu3N [400] Topochemical nitridation of TMD by NH3 at high temperature Mo2N [438] MoN [435,438] The common methods for synthesizing MNs thin films include radio frequency (RF) magnetron sputtering [366][367]…”
Section: Synthetic Routes Corresponding 2d Mnsmentioning
confidence: 99%
“…Plasma-assisted pulsed laser deposition Zn3N2 [402] HfN [404] Plasma-enhanced atomic layer deposition Mo2N [419] NbN [421,422] TaN [423] Plasma-enhanced chemical vapor deposition AlN [183,184] Pulsed laser deposition Zn3N2 [401] TiN [403] NbN [405] Cu3N [406] AlN [188,190] Zn3N2 [370][371][372][373][374][375] CrN [377] CoN (Co target) [493] HfN [494] Hf3N4 [494,495] RF reactive magnetron sputtering HfN (HfN target) [367][368][369] ZnN (ZnN target) [366] TiN (Ti target) [376] AuN2 (Au target) [378] Zr3N4 [379] Co3N [380] Room temperature ion beam assisted sputtering NbN [496] Thermal decomposition Ca2N [497] Thermal evaporation Zn3N2 [398,399] Cu3N [400] Topochemical nitridation of TMD by NH3 at high temperature Mo2N [438] MoN [435,438] The common methods for synthesizing MNs thin films include radio frequency (RF) magnetron sputtering [366][367]…”
Section: Synthetic Routes Corresponding 2d Mnsmentioning
confidence: 99%
“…To form an ideal p-n junction with CZTS, an appropriate thickness of MoSe 2 is needed so that it could give good quantified optical, morphological and electrical properties. It is because thick layer could hinder the transmission of photons and too thin layer could cause shorting due to pinholes in film [12,13] . In current work, MoSe 2 coated CZTS diode thin films were grown as layer by layer by sol-gel followed by spin coating and thermal evaporation route.…”
Section: Introductionmentioning
confidence: 99%