Effect of Annealing Temperature on $\hbox{TiO}_{2}$ -Based Thin-Film-Transistor Performance

Extraction of Schottky barrier at the F-doped SnO2/TiO2 interface in Dye Sensitized solar cells

“…The TiO 2 films are subjected to a rapid thermal annealing at 500 C for 10 min under Oxygen/Nitrogen environment to improve the crystallinity of the samples. 20 The top contact on TiO 2 is made by depositing 100 nm of Titanium and Aluminium on to the TiO 2 sample on insulating glass substrate by means e-beam and thermal evaporation, respectively. Room temperature I-V characteristics are measured in vacuum using a Desert cryogenic probe station interfaced with a Keithley 4200 source meter.…”

Device instability of postannealed TiOx thin-film transistors under gate bias stresses

“…Figure 5 shows the 26 Crystallization was confirmed by the TEM images, and once crystallized, the average grain size increased with annealing temperature, from approximately 200 nm at 450 C to about 400 nm at 550 C. The formation of grain boundaries is significantly associated with the electrical properties of a material. In order to investigate the microstructure of the films, XRD and TEM data were measured at different annealing temperatures.…”

Effects of silicon doping on the performance of tin oxide thin film transistors

“…Due to higher annealing temperature, the oxygen in air diffused into the films and filled the oxygen vacancy defects easier, presenting a more compact structure and better crystallinity. The higher mobility originates from the larger domains and fewer grain boundaries in TSO channel layers . To an oxide TFT, the mobility is the larger the better without deterioration of other parameters, because it is able to drive larger‐area and higher‐definition flat panel displays.…”