Effect of applied hydrostatic pressure on the e–h ground transition in self‐assembled InAs/GaAs quantum lens

Abstract

A theoretical study of the e -h ground transition in self-assembled InAs/GaAs quantum dots under hydrostatic pressure P is performed. The quantum dots have lens shape geometry of maximum height b and circular cross section or radius a with b < a. In the framework of the envelope-function approximation the electronic states are evaluated as a function of the finite wall potentials, hydrostatic pressure and different lens geometry b/a. It is assumed that the increase of P keep constant the geometrical lens ratio b/a. The pressure dependence of all parameters entering into the description of the e -h transition have been taken into account. The results obtained taking the finite barrier are compared with the infinite model. It is shown that the variation of the e -h ground transition can be modelled using the simple infinite hard wall model with an effective dot radius as a fitting parameter.

Optical transition in self-assembled InAs/GaAs quantum lens under high hydrostatic pressure

“…This behavior is due to the InAs energy gap dependence on P according to Eq. (2) 35,48 . In the case of Fig.…”