Effect of Ar fast atom beam irradiation on alpha-Al₂O₃ for surface activated room temperature bonding

Abstract

This study focuses on surface-activated bonding (SAB) of sapphire (alpha-Al2O3) wafers at room temperature. In the surface activation process, Ar fast atom beam irradiation is used as the physical sputtering method. The bond strength estimated by the crack opening method is approximately 1.63 [J/m2]. The binding state of the activated alpha- Al2O3 surface is determined using angle-resolved X-ray photoelectron spectroscopy. The results reveal that there are two binding energies of Al2p (73.9 and 74.0 [eV]) on the surface of the fast atom beam (FAB)-irradiated wafer, indicating that the surface activation changes the binding state of the utmost alpha- Al2O3 surface. This suggests that the contact of the changed Al2O3 surface contributes to the formation of a strong bond interface.

Influence of the Chemical Composition of Ceria Conversion Coatings, Sealed in Solution of NaH2PO4 and Ca(NO3)2, on the Corrosion Behavior of Aluminum

“…Calculating the peak area, we determined that 8.6% of the surface has been completely exposed by the corrosion test, which also accounted for the worse results in (Section 3.4.4. Investigations of Rp, Figure 8) of this sample after the 48th h. The following peak at 73.9 eV corresponds to Al 2 O 3 [58]. For sample S3, the surface is characterized almost entirely by aluminum oxide.…”