Effect of Ar in the source gas on the microstructure and optoelectronic properties of microcrystalline silicon films deposited by plasma-enhanced CVD

Wang, Desheng; Liu, Qiming; Li, Fēi; Qin, Yuliang; Liu, Dequan; Tang, Zeguo; Peng, Shanglong; He, Deyan

doi:10.1016/j.apsusc.2010.08.068

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Characterization Of Si Alloy Films1

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Cited by 12 publications

(1 citation statement)

References 22 publications

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“…In polycrystalline silicon thin film, the peak is shifted to lower wavenumber because of the amorphous phase and occurs at 517-518cm -1 . The crystalline volume fraction (X c ) was calculated using relation [28,34,35] (…”

Section: Characterization Of Si Alloy Filmsmentioning

confidence: 99%

Single- and Multiple-Junction p-i-n Type Amorphous Silicon Solar Cells with p-a-Si1-xCx:H and nc-Si:H Films

Iftiquar¹,

Lee²,

Lee³

et al. 2012

Photodiodes - From Fundamentals to Applications

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Section: Characterization Of Si Alloy Filmsmentioning

confidence: 99%

Single- and Multiple-Junction p-i-n Type Amorphous Silicon Solar Cells with p-a-Si1-xCx:H and nc-Si:H Films

Iftiquar¹,

Lee²,

Lee³

et al. 2012

Photodiodes - From Fundamentals to Applications

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Effect of argon on the structure of hydrogenated nanocrystalline silicon deposited from tetrachlorosilane/hydrogen/argon plasma

Lin

Gao

Xiao

et al. 2012

Physica Status Solidi (a)

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Hydrogenated nanocrystalline silicon films (nc‐Si:H) have been deposited by the decomposition of tetrachlorosilane (SiCl4) diluted with hydrogen (H2) and argon (Ar) by a plasma‐enhanced chemical vapor deposition (PECVD) method. Basing on the structural characterization of nc‐Si:H, we have found that Ar affects the growth of films deposited at two substrate temperatures (Ts = 250 and 120 °C) in different ways. At Ts = 250 °C, the Ar gas deteriorates the crystallinity of nc‐Si:H, whereas, at Ts = 120 °C, the crystallization of nc‐Si:H films is promoted with increasing argon flow rate (Hf) from 10 to 30 sccm; however, the extremely high Ar dilution adversely affects the ordered structure of films. Meanwhile, the hydrogen concentration in the films is also controlled by Hf. Finally, the effects of Ar in the SiCl4/H2/Ar system have been discussed in related to the equilibrium of atomic hydrogen and ionized argon.

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Silicon Dioxide Coating of Titanium Dioxide Nanoparticles from Dielectric Barrier Discharge in a Gaseous Mixture of Silane and Nitrogen

Dahle

Wegewitz

et al. 2013

Plasma Chem Plasma Process

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Effect of Ar in the source gas on the microstructure and optoelectronic properties of microcrystalline silicon films deposited by plasma-enhanced CVD

Cited by 12 publications

References 22 publications

Single- and Multiple-Junction p-i-n Type Amorphous Silicon Solar Cells with p-a-Si1-xCx:H and nc-Si:H Films

Single- and Multiple-Junction p-i-n Type Amorphous Silicon Solar Cells with p-a-Si1-xCx:H and nc-Si:H Films

Effect of argon on the structure of hydrogenated nanocrystalline silicon deposited from tetrachlorosilane/hydrogen/argon plasma

Silicon Dioxide Coating of Titanium Dioxide Nanoparticles from Dielectric Barrier Discharge in a Gaseous Mixture of Silane and Nitrogen

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